Semiconductor structure and manufacturing method thereof

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The method comprises steps: a substrate is provided, wherein the substrate has fin parts; an isolation structure is formed on the substrate between the fin parts, fin parts protruding against the isolation structure serve as a first fin part area; a gate structure crossing the fin parts and covering the partial top surface and the partial side wall surface of the first fin part area is formed; with the gate structure as a mask, a first light doping process is carried out on one side of the first fin part area, wherein doping ions are first ions; with the gate structure as a mask, a second light doping process is carried out on the other side of the first fin part area, wherein doping ions are second ions, the second ion type and the first ion type are the same, and the atomic mass of the second ions is smaller than that of the first ions; and after the first light doping process and the second light doping process, an annealing process is carried out on the substrate. Through combination of the first ions and the second ions, the quality of the fin parts can be improved, the short-channel effects of the device are also improved, and the electrical performance of the semiconductor device are further optimized.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] In semiconductor manufacturing, with the development trend of VLSI, the feature size of integrated circuits continues to decrease. In order to adapt to the reduction of feature size, the channel length of MOSFET field effect transistors is also continuously shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur. [0003] Therefore, in order to better adapt to the reduction of feature size, t...

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Problems solved by technology

[0004] However, the electrical properties of semiconductor devices formed by prior art still need to be improved

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