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Data writing method, memory control circuit unit and memory storage device

A data writing and control circuit technology, applied in the direction of electrical digital data processing, instruments, etc., can solve the problems of short service life, slow data writing speed, etc., and achieve the effect of improving speed and reliability

Active Publication Date: 2020-01-21
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the service life of the physical erasing unit operating in the multi-page programming mode is relatively short, and the speed of writing data is slower than that of the physical erasing unit operating in the single-page programming mode

Method used

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  • Data writing method, memory control circuit unit and memory storage device
  • Data writing method, memory control circuit unit and memory storage device
  • Data writing method, memory control circuit unit and memory storage device

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Embodiment Construction

[0091] Generally speaking, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory module and a controller (also called a control circuit unit). Typically memory storage devices are used with a host system such that the host system can write data to or read data from the memory storage device.

[0092] figure 1 is a schematic diagram of a host system, memory storage devices, and input / output (I / O) devices shown according to an example embodiment. and figure 2 is a schematic diagram of a host system, a memory storage device, and an input / output (I / O) device shown according to another exemplary embodiment.

[0093] Please refer to figure 1 and figure 2 , the host system 11 generally includes a processor 111 , a random access memory (random access memory, RAM) 112 , a read only memory (read only memory, ROM) 113 and a data transmission interface 114 . The processor 111 , random access memory 112 , ROM 113 and data transmissio...

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Abstract

The invention provides data writing methods used for a rewritable non-volatile memory module, a memory control circuit unit and memory storage devices. One of the data writing methods includes: at least grouping physical erasure units of the rewritable non-volatile memory module into a first area and a second area, wherein data of the physical erasure units of the second area are written in a one-page programming mode, and data of the physical erasure units of the first area are written in a multi-page programming mode. The one of the data writing methods further includes: receiving first data; and judging whether the number of physical erasure units, of which only partial physical programming units are programmed, in the physical erasure units of the first area is less than a predetermined number, and if yes, writing the first data into the physical erasure units of the second area. The method can effectively increase a speed and a reliability degree of programming data.

Description

technical field [0001] The invention relates to a data writing method, in particular to a data writing method for a rewritable non-volatile memory module, a memory control circuit unit and a memory storage device. Background technique [0002] The rapid growth of digital cameras, mobile phones, and MP3 players has led to a rapid increase in consumer demand for storage media. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of data non-volatility, power saving, small size, no mechanical structure, fast read and write speed, etc., it is most suitable for portable electronic products, such as laptop. A solid state drive is a memory storage device that uses a flash memory module as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years. [0003] In a NAND flash memory module, the physical programming unit is composed of several memory cells arranged on the s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F13/16
Inventor 叶志刚张博勇
Owner PHISON ELECTRONICS