A kind of algainp-based light-emitting diode and its manufacturing method

Abstract

The invention provides an AlGaInP-based light-emitting diode and a manufacturing method thereof, wherein the P electrode adopts the through-hole technology, that is, the P-electrode through-hole is drilled through the epitaxial layer along the direction perpendicular to the plane where the epitaxial layer is located, so that the main body of the P-electrode A part is located on the n-type epitaxial layer, and a P electrode and an N electrode are fabricated, so that the P electrode and the N electrode are equal in height. The method solves the problem that in the existing LED, due to the large height difference between the P electrode and the N electrode, when the chip is packaged and bonded, the LED chip is prone to tilting, which increases the difficulty of packaging. In addition, the LED provided by the present invention also has an isolation channel on the basis of the above, which solves the problem of easy leakage between P / N electrodes caused by solder extrusion deformation during the packaging and bonding process of the existing LED. Moreover, the structure of the ODR reflector in the present invention is an ODR reflector dielectric film layer and an ODR reflector metal layer, and the reflection efficiency is high.

Description

technical field [0001] The invention relates to the technical field of LEDs, and more specifically relates to an AlGaInP-based light-emitting diode and a manufacturing method thereof. Background technique [0002] With its many advantages, LED is developing rapidly. Such as figure 1 as shown, figure 1 It is a schematic structural diagram of a commonly used flip-chip AlGaInP-based LED based on a transparent substrate. The manufacturing process of the LED is as follows: [0003] First, AlGaInP epitaxial wafers are grown on a GaAs substrate, then the surface of the epitaxial wafers is roughened, and the epitaxial wafers are bonded to the transparent substrate 101 by using BCB, and then the GaAs substrate is removed (the GaAs substrate is used as a temporary substrate bottom), and etch out a P-type AlGaInP mesa 102, wherein a transparent bonding layer 103 is provided between the P-type AlGaInP mesa 102 and the transparent substrate 101, and a P-type AlGaInP mesa 102 and an N-...

AI Technical Summary

Problems solved by technology

[0004] However, the inventors found that there is a large height difference between the P electrode and the N electrode in the LED manufactured by the current manufacturing process. When the chip is packaged and bonded, the LED chip is prone to tilting, which increases the difficulty of packaging.

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