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Photoresist removing solution

A degumming solution and photoresist technology, applied in the field of wafer manufacturing, can solve problems such as corrosion, achieve good water solubility, improve degumming speed and degumming ability, and be easy to clean.

Inactive Publication Date: 2018-01-12
JIANGSU AISEN SEMICON MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] For the glue remover, the most important thing is the selectivity of the attacking material, that is to say, the glue remover should remove the photoresist efficiently, but it should not have obvious effects on various substrates such as metal, silicon, silicon oxide, passivation, etc. corrosion

Method used

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Embodiment 1~9

[0017] In the dust-free laboratory according to the formula in Table 1, alcohols, organic alcohol amines, quaternary ammonium bases (optionally adding reducing agents), deionized water, polar aprotic organic solvents (optionally adding corrosion inhibitor), and stir evenly.

[0018] Table 1:

[0019] Unit: wt%

[0020]

[0021] Note: The part of the total proportion less than 100wt% in Table 1 is supplemented with deionized water.

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Abstract

The invention belongs to the technical field of wafer manufacturing, and relates to a photoresist removing solution. The formula of the photoresist removing solution comprises 1 to 30 weight percent of alcohols, 0.1 to 10 weight percent of organic alcohol amine, 0.1 to 5 weight percent of quaternary ammonium base, 60 to 90 weight percent of polar aprotic organic solvents, and the balance of deionized water. The photoresist removing solution provided by the invention greatly improves the photoresist removing speed and the photoresist removing capacity, and moreover, reduces the corrosion to various substrates, such as metal, a passivation layer and silicon oxide; the water solubility is high; a wafer is easy to clean after a photoresist is removed.

Description

technical field [0001] The invention relates to the technical field of wafer manufacturing, in particular to a photoresist stripping solution with good stripping effect and less attack on the substrate. Background technique [0002] Photoresist, also known as photoresist, is a non-conductive photosensitive material that transfers the pattern on the photomask to the wafer through the principle that its characteristics will change after being exposed to light. After development, the uncured photoresist needs to be washed off with a glue remover to expose the substrate and then perform corresponding etching. [0003] For the glue remover, the most important thing is the selectivity of the attacking material, that is to say, the glue remover should remove the photoresist efficiently, but it should not have obvious effects on various substrates such as metal, silicon, silicon oxide, passivation, etc. corrosion effect. [0004] The present invention solves the above problems in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 杜冰顾群艳梁豹鲍杰张兵朱坤
Owner JIANGSU AISEN SEMICON MATERIAL CO LTD