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A manufacturing method of a power diode and the power diode

A technology of power diodes and electrodes, applied in the field of semiconductor chip manufacturing, can solve problems such as on-state voltage drop

Inactive Publication Date: 2018-01-12
PEKING UNIV FOUNDER GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The PIN fast recovery rectifier has a faster reverse recovery time, but its on-state voltage drop is very high

Method used

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  • A manufacturing method of a power diode and the power diode
  • A manufacturing method of a power diode and the power diode
  • A manufacturing method of a power diode and the power diode

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Embodiment Construction

[0032] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that, in the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined with each other.

[0033] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0034] figure 1 A schematic flowchart of a method for manufacturing a power diode according to an embodiment of the present invention is shown.

[0035] Such as figure 1As shown, the method for pr...

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Abstract

The invention provides a manufacturing method of a power diode and the power diode, wherein the manufacturing method comprises the steps of sequentially forming an N type epitaxial layer and an N typejunction region of a preset area of the N type epitaxial layer on an N type substrate; sequentially forming a field oxide layer, a polycrystalline silicon layer and an insulating layer mask structureon the N type epitaxial layer after forming the N type junction area; and the insulating layer mask structure and the N type junction area are vertically aligned; using the insulating layer mask structure as a mask and sequentially carrying out anisotropic etching on the polycrystalline silicon layer and the field oxide layer so as to expose a designated area for manufacturing an epitaxial layerof a body region; forming a P type body region in a prescribed region of the epitaxial layer and forming a P- type region at an edge of the P type body region; and forming an N+ type area and electrode separated from the P- type area in the epitaxial layer on the inner side of the P- type area so as to complete manufacturing of the power diode. Through the technical scheme of the present invention, the on-state pressure drop of the device is reduced, and the reliability of the power diode is further raised.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a method for preparing a power diode and a power diode. Background technique [0002] At present, power diodes are key components of circuit systems, and are widely used in various advanced weapon control systems and instruments such as high-frequency inverters, digital products, generators, televisions and other civilian products and satellite receiving devices, missiles and aircraft. Equipment for military use. Power diodes are expanding in two important directions: (1) to tens of millions or even tens of thousands of amperes, which can be applied to high-temperature arc wind tunnels, resistance welding machines and other occasions; (2) the reverse recovery time is getting shorter and shorter, showing a trend towards Developing in the direction of ultra-fast, ultra-soft, and ultra-durable, it is not only used in rectification occasions, but also has di...

Claims

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Application Information

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IPC IPC(8): H01L29/861H01L29/06H01L21/329
Inventor 李理赵圣哲马万里
Owner PEKING UNIV FOUNDER GRP CO LTD
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