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LDMOS-SCR device used for high-voltage ESD protection

A LDMOS-SCR, ESD protection technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of low maintenance voltage, latch-up effect, integrated circuit failure, etc., achieve low trigger voltage, reduce trigger voltage, Effect of high sustaining voltage

Active Publication Date: 2018-01-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the maintenance voltage of LDMOS-SCR devices is usually 2V-3V. When it is used to protect high-voltage integrated circuits with a power supply voltage greater than 10V, its maintenance voltage is too low, and it is prone to latch-up, resulting in the failure of the entire integrated circuit. The phenomenon is especially serious in high-voltage integrated circuits

Method used

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  • LDMOS-SCR device used for high-voltage ESD protection
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  • LDMOS-SCR device used for high-voltage ESD protection

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Embodiment Construction

[0028] The technical scheme of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0029] like Figure 4 Shown is a schematic diagram of the LDMOS-SCR device structure (a) and its equivalent circuit (b) for high-voltage ESD protection provided by the present invention. The LDMOS-SCR device structure is composed of one LDMOS-SCR and (n-1) VSCR stacked units connected in parallel with well resistors in series, that is, LDMOS-SCR101, the first stacked unit 201, and the second stacked unit 301 , ..., the n-1st stacking unit n01 constitutes, wherein, n is a positive integer greater than or equal to 1;

[0030] Wherein, the LDMOS-SCR 101 includes a P-type silicon substrate 210; an N-type deep well region 220 formed in the P-type silicon substrate 210; a P-type deep well region 220 formed in the N-type deep well region 220. type well region 230, the first P type heavily doped region 222 and the first N type heavil...

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Abstract

The invention provides an LDMOS-SCR device used for high-voltage ESD protection, and belongs to the technical field of electro-static discharge protection circuits of integrated circuits. The LDMOS-SCR device used for high-voltage ESD protection comprises an LDMOS-SCR and (n-1) VSCR stacking units connected with a well resistor in parallel, a gate capacitor of the LDMOS-SCR and the well resistor in the stacking units form an embedded RC channel, the goal of reduction of a triggering voltage of the LDMOS-SCR can be achieved, and a maintenance voltage of the device is commonly determined by a maintenance voltage of the LDMOS-SCR device and a maintenance voltage of the (n-1) VSCR stacking units and is increased with the increase of the stacking number of the VSCRs. Therefore, according to theLDMOS-SCR device used for high-voltage ESD protection, high maintenance voltage is realized, and low triggering voltage is maintained.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit electrostatic discharge (ESD: Electro-Static discharge) protection circuit, and in particular relates to a laterally diffused metal oxide semiconductor (Laterally Diffused Metal Oxide Semiconductor for short LDMOS) with a high sustaining voltage for high-voltage ESD protection- Semiconductor Control Rectifier SCR (Semiconductor Control Rectifier referred to as SCR). Background technique [0002] Electrostatic discharge (ESD) is a process in which limited charges are transferred between two objects of different potentials. This instantaneous discharge process generates extremely high voltage and current pulses. In the IC manufacturing and application environment, the current flows through the IC The circuit will cause damage to the gate oxide layer and metal interconnection of the internal devices of the circuit, resulting in device failure. [0003] The ESD protection device can effect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105
Inventor 刘志伟钱玲莉刘继芝
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA