Method for on-line measurement of junction temperature by using reverse gate source current of GaN-based HEMT device

Abstract

The invention, which belongs to the electronic device testing field, discloses a method for on-line measurement of a junction temperature by using a reverse gate source current of a GaN-based HEMT device. A tested HEMT device 1 is fixed on a constant-temperature platform; a semiconductor device analyzer is used for setting relevant parameters and measuring reverse gate source currents Igs under different gate-source voltage Vgs and drain-source voltage Vds; the temperature of the constant-temperature platform is changed and reverse gate source currents Igs of the HEMT device 1 at different temperatures and under different gate-source voltage Vgs and drain-source voltage Vds; and according to the measured data, a changing relation curve of the reverse gate source currents Igs of the HEMT device with time under a fixed drain-source voltage Vds and a fixed gate-source voltage Vgs and a temperature calibration curve base is established; and a corresponding temperature calibration curve isselected based on an actual condition and thus a junction temperature of the HEMT device on the high-temperature reversal-of-biasing condition is obtained based on the temperature calibration curve. Therefore, the junction temperature is measured and obtained without damaging the device packaging; and a problem of low temperature resolution with usage of an infrared thermography method or laser Raman microscopy method is solved.

Description

technical field [0001] The invention belongs to the field of electronic device testing, and is mainly used for measuring and analyzing the junction temperature of the device, in particular to a test for testing the junction temperature of a GaN-based HEMT (High Electron Mobility Transistor, high electron mobility transistor) device under high-temperature reverse bias conditions method. Background technique [0002] HEMT devices have the advantages of high electron saturation drift speed, critical breakdown field strength, and high maximum allowable operating temperature, and have become key devices in military radar, large-scale communication systems and other application fields. With the continuous reduction of device gate length and continuous increase of power density, the temperature of the active region is high and changes rapidly during normal operation of the device, which has a serious impact on the life and reliability of the device. The Arrhenius relationship show...

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Problems solved by technology

[0004] Aiming at the problem that the current measurement method cannot meet the problem of accurately measuring the junction temperature of HEMT devices, the present invention proposes a method for online measurement of junction temperature by using the Schottky reverse leakage current of GaN-based HEMT devices

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