Collector current soft measurement method applied to grid-control device

Abstract

The invention discloses a collector current soft measurement method applied to a grid-control device, and belongs to the field of power electronics. The method comprises the steps of firstly buildinga steady-state current analysis model and a transient current analysis model of the grid-control device, building an overall current analysis model of the grid-control device according to the two modes above, and screening out a key parameter of the grid-control device; then collecting multiple sets of test data in an application circuit of the grid-control device, wherein each set of test data comprises the key parameter of the grid-control device screened out by analysis soft measurement modeling and a collector current of the corresponding grid-control device; further building a statisticaldata model by using the collected multiple sets of test data, that is to say a machine learning algorithm is used for building a relation between the key parameter and the collector current of the corresponding grid-control device; collecting the key parameter in real time when in actual measurement, and putting the collected key parameter into the statistical data model built by experience datasoft measurement modeling, thus acquiring the indirectly measured collector current of the grid-control device. The method provided by the invention has the advantages of high speed and low cost.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a collector current soft-sensing method for gate-controlled devices. Background technique [0002] In the field of power electronics, gate-controlled devices are voltage-controlled power gate-controlled devices, including VDMOS, LDMOS, IGBT, MCT, etc., among which insulated gate bipolar transistors (IGBTs) have been widely used as new power devices, from power generation, It can be seen from power transmission to power transformation. With the development of power electronics technology, in the power electronics system with IGBT as the core power device, the measurement of IGBT collector current is essential, whether it is power control or IGBT drive control. [0003] Existing gate-control device collector current measurement technologies include current measurement transformers, LEM sensors, Hall sensors, resistors, Rogowski coils, etc. There are more and...

AI Technical Summary

Problems solved by technology

[0003] Existing gate-control device collector current measurement technologies include current measurement transformers, LEM sensors, Hall sensors, resistors, Rogowski coils, etc. There are more and more parallel applications of gate-controlled devices. These traditional gate-controlled device collector current measurement technologies can no longer meet the requirements for future gate-controlled device collector current measurement, mainly because of speed and cost.

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