P-type crystalline silicon solar cell preparing method

Abstract

The invention discloses a P-type crystalline silicon solar cell preparing method. The method comprises the steps that phosphorus diffusion is carried out on the front of a P-type silicon wafer after texturing, and an acquired phosphorus diffusion layer forms an emitter junction; the phosphorus diffusion layer is thermally oxidized to form a tunnel oxide layer; a polycrystalline silicon thin film with the thickness range of 5 nm to 20 nm is deposited on the tunnel oxide layer; wound plating and a wound expansion layer on the back of the P-type silicon wafer are removed, and a silicon nitride thin film is deposited on the front; a silicon nitride and alumina laminated thin film is deposited on the back of the P-type silicon wafer, and laser trepanning is carried out; and screen printing andsintering are carried out. According to the P-type crystalline silicon solar cell preparing method, the problems of front passivation and metallization of P-type crystalline silicon and the problem oflight absorption of the polycrystalline silicon thin film in a passivated contact structure are solved, and the cell conversion efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic equipment, and in particular relates to a preparation method of a P-type crystalline silicon solar cell. Background technique [0002] For crystalline silicon solar cells, the passivation and contact level of the device are most directly related to the improvement of cell efficiency, so the optimization of surface passivation and contact characteristics is very important. The existing P-type crystalline silicon cell introduces an aluminum oxide film layer on the back to enhance passivation, and through laser opening to enhance metal contact to form a PERC (Passivated emitter and rearcontact) cell, the mass production efficiency of P-type crystalline silicon cell has reached 21%. breakthrough. PERC back passivation technology effectively solves the problems of P-type crystalline silicon back passivation and metal contact. Therefore, front surface passivation and metallization optimization are...

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Problems solved by technology

However, the polysilicon film in the passivation contact structure that satisfies the carrier lateral transport conditions has a strong light absorption ability, which will affect the output current of the battery

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