A kind of epitaxial wafer of light-emitting diode and its preparation method

Abstract

The invention discloses an epitaxial wafer of a light emitting diode and a preparation method thereof, belonging to the technical field of semiconductors. The epitaxial wafer comprises a substrate anda buffer layer, an N-type gallium nitride layer, a multi-quantum well layer, an electron blocking layer and a P-type gallium nitride layer that are sequentially stacked on the substrate, and also comprises a composite layer stacked between the buffer layer and the N-type gallium nitride layer, wherein the composite layer comprises multiple gallium nitride layers and multiple zinc oxide layers, and the multiple gallium nitride layers and the multiple zinc oxide layers are alternately stacked. According to the scheme of the invention, the composite layer is arranged between the buffer layer andthe N-type gallium nitride layer, the composite layer comprises the multiple gallium nitride layers and the multiple zinc oxide layers that are alternately stacked, the dislocation and stress polarization extension caused by lattice mismatch between a sapphire or silicon substrate and gallium nitride can be effectively controlled, the crystal quality of the epitaxial wafer can be improved, a better crystal base for the multi-quantum well layer can be provided, the internal quantum efficiency of the light emitting diode can be improved, and thus the luminous efficiency of the light emitting diode can be improved.

Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a light emitting diode and a preparation method thereof. Background technique

[0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor light emitting device made by using the principle of semiconductor PN junction electroluminescence. The epitaxial wafer is the primary product in the process of manufacturing light-emitting diodes.

[0003] The existing epitaxial wafer includes a substrate and a buffer layer, an undoped gallium nitride layer, an n-type gallium nitride layer, a multi-quantum well layer, an electron blocking layer and a p-type gallium nitride layer stacked sequentially on the substrate. Wherein, the multi-quantum well layer includes multiple quantum wells and multiple quantum barriers, the multiple quantum wells and multiple quantum barriers are alternately stacked, the quantum wells are InGa...

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