Large-area two-dimensional transition-group metal-compound film with controllable layers and a preparation method thereof

Abstract

The invention, which belongs to the technical field of film preparation, in particular relates to a large-area two-dimensional transition-group metal-compound film with controllable layers and a preparation method thereof. The basic chemical-combination chemical formula of the transition-group metal-compound film is MX2, wherein the M expresses a V-group element and the X expresses a sulfur-groupelement. The preparation method comprises: a precursor is deposited on a substrate; and then chemical vapor deposition reaction is carried out to form a transition-group metal compound, wherein a metal M layer is deposited by using physical vapor deposition and electron beam evaporation deposition or oxide or nitride of the metal M is deposited by atomic layer deposition and molecular beam epitaxydeposition. According to the invention, a large-area two-dimensional film with controllable layers is prepared, so that the limitation that the exiting two-dimensional transition-group metal-compoundfilm can not be prepared currently is eliminated. Therefore, the large-area two-dimensional transition-group metal-compound film and the preparation method thereof are expected to be applied in a large-scale integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of film preparation, and in particular relates to a large-area transition metal compound film and a preparation method thereof, in particular to a large-area transition metal compound film with a controllable number of layers and a preparation method thereof. Background technique [0002] With the development of semiconductor technology, the feature size of semiconductor devices is getting smaller and smaller. At present, the device size has been reduced to 14nm. When the node size is reduced to a certain limit, new technologies are needed to break through the limit. Since the discovery of graphene, two-dimensional materials have received more and more attention, but so far, due to the structural characteristics of graphene, they cannot be applied to the manufacture of actual semiconductor transistors. At this time, two-dimensional transition metal compounds (TMDCs ) into people's eyes. [0003] Monolayer T...

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Problems solved by technology

[0006] The present invention can prepare large-area transition metal compound thin films with single-layer to three-layer layers according to needs, which breaks through the current limitation that two-dimensional materials cannot be prepared in large areas, and is expected to be applied in the production of large-scale integrated circuits in the future

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