A modified g-c3n4 quantum dot/tio2 nanowire photoanode and its application

A g-c3n4, nanowire technology, applied in electrodes, electrolysis components, electrolysis processes, etc., can solve problems such as photocorrosion and environmental pollution, and achieve simple process, excellent stability, excellent stability and photocatalytic hydrogen production performance. Effect

Active Publication Date: 2019-01-25
INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, quantum dots such as cadmium selenide have serious photocorrosion and environmental pollution caused by heavy metal elements.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A modified g-c3n4 quantum dot/tio2 nanowire photoanode and its application
  • A modified g-c3n4 quantum dot/tio2 nanowire photoanode and its application
  • A modified g-c3n4 quantum dot/tio2 nanowire photoanode and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Example 1 A modified g-C 3 N 4 Quantum dots / TiO 2 Nanowire Photoanodes 1

[0032] A modified g-C 3 N 4 Quantum dots / TiO 2 nanowire photoanodes, the modified g-C 3 N 4 Quantum dots / TiO 2 The preparation method of nanowire photoanode is as follows:

[0033] (1) Place the FTO conductive glass in the growth solution, in which hydrochloric acid, tetrabutyl titanate, and water mixed solution are used as the growth solution, and TiO is synthesized on FTO by solvothermal synthesis at 150°C for 15 hours 2 array of nanowires; the prepared TiO 2 nanowire arrays with N 2 Blow dry for later use;

[0034] (2) Put g-C in the crucible 3 N 4 The precursor dicyandiamide and barbituric acid, the mass ratio of dicyandiamide and barbituric acid is 50:1, mix well, and the TiO obtained in step (1) 2 The nanowires are placed above the precursor in the crucible, and calcined in a muffle furnace by a similar chemical vapor deposition method. The temperature is raised to 550°C at a ...

Embodiment 2

[0035] Example 2 A modified g-C 3 N 4 Quantum dots / TiO 2 Nanowire Photoanodes 2

[0036] A modified g-C 3 N 4 Quantum dots / TiO 2 nanowire photoanodes, the modified g-C 3 N 4 Quantum dots / TiO 2 The preparation method of nanowire photoanode is as follows:

[0037] (1) Place the FTO conductive glass in the growth solution, in which hydrochloric acid, tetrabutyl titanate, and water mixed solution are used as the growth solution, and TiO is synthesized on FTO by solvothermal synthesis at 150°C for 18 hours 2 array of nanowires; the prepared TiO 2 nanowire arrays with N 2 Blow dry for later use;

[0038] (2) Put g-C in the crucible 3 N 4 The precursor urea and barbituric acid, the mass ratio of urea and barbituric acid is 100:1, mix evenly, the TiO obtained in step (1) 2 The nanowires are placed above the precursor in the crucible, and calcined in a muffle furnace by a similar chemical vapor deposition method. The temperature is raised to 550°C at a heating rate of 2.5...

Embodiment 3

[0039] Example 3 A modified g-C 3 N 4 Quantum dots / TiO 2 Nanowire Photoanodes 3

[0040] The modified g-C provided by this embodiment 3 N 4 Quantum dots / TiO 2 The preparation method of the nanowire photoanode is the same as in Example 1, except that the mass ratio of dicyandiamide to barbituric acid in this example is 10:1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a modified g-C3N4 quantum dot / TiO2 nanowire photoanode and an application thereof. The preparation method of the modified g-C3N4 quantum dot / TiO2 nanowire photoanode is as follows: S1: placing conductive glass on a growth In liquid, TiO2 nanowires were synthesized on conductive glass by solvothermal synthesis method, and dried with inert gas for use; S2: put a mixture of g-C3N4 precursor and barbituric acid in a crucible, and then TiO2 nanowires obtained by S1 The wire is placed above the mixture in the crucible, and is calcined in a muffle furnace by a chemical vapor deposition method to obtain modified g-C3N4 quantum dots / TiO2 nanowire photoanode; wherein, the g-C3N4 precursor and bar The mass ratio of bituric acid is 10-10000:1-100. The modified g-C3N4 quantum dot / TiO2 nanowire photoanode provided by the invention has better photocorrosion resistance, photoelectrochemical performance and stability, and can be used for hydrogen production by decomposing water.

Description

technical field [0001] The invention relates to the technical field of material preparation and photocatalytic water splitting, in particular to a modified g-C 3 N 4 Quantum dots / TiO 2 Nanowire photoanodes and their applications. Background technique [0002] With the progress of human society and the development of global industry, the shortage of supply and demand of primary fossil energy such as oil and coal mines is becoming increasingly severe, and the situation of harsh environment is not optimistic. Energy issues and environmental issues have become two major problems on the road to sustainable development for all countries in the world. Looking for A renewable and recyclable clean energy is imminent. The renewable and non-polluting combustion process of hydrogen energy makes it stand out among clean energy. Fossil fuel hydrogen production and electrolytic water hydrogen production are the main methods of hydrogen production at present, but these two technologies n...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C25B1/04C25B11/06
CPCC25B1/04C25B11/04C25B1/55Y02E60/36
Inventor 黄兰艳王新陈志鸿苑明哲周国富
Owner INT ACAD OF OPTOELECTRONICS AT ZHAOQING SOUTH CHINA NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products