Unlock instant, AI-driven research and patent intelligence for your innovation.

Plasma source cooling mechanism and semiconductor processing equipment

A technology of plasma source and cooling mechanism, which is applied in the direction of plasma, semiconductor/solid-state device manufacturing, discharge tube, etc., can solve the problems of forced convection obstruction, reduced heat dissipation capacity of equipment, and slow heat convection speed, so as to reduce resistance, Improved heat dissipation and increased speed

Active Publication Date: 2018-02-09
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the direction of the forced convection is opposite to that of the natural convection, the natural convection actually hinders the forced convection to a certain extent, resulting in slower heat convection, thereby reducing the heat dissipation capacity of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma source cooling mechanism and semiconductor processing equipment
  • Plasma source cooling mechanism and semiconductor processing equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] In order to enable those skilled in the art to better understand the technical solution of the present invention, the cooling mechanism of the plasma source and the semiconductor processing equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0028] figure 2 A cross-sectional view of the cooling mechanism of the plasma source provided by the embodiment of the present invention. see figure 2 , the plasma source includes a dielectric cylinder 11 , a coil 12 surrounding the dielectric cylinder 11 and a coil box 10 covering the coil 12 . The dielectric cylinder 11 is usually made of insulating materials such as ceramics. The coil 12 is a three-dimensional coil. By applying radio frequency power to the coil 12 , radio frequency energy can be fed into the dielectric cylinder 11 to form plasma inside the dielectric cylinder 11 .

[0029] The cooling mechanism includes a first air inlet 24 , a first ai...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a plasma source cooling mechanism and semiconductor processing equipment. The plasma source comprises a medium cylinder, a coil surrounding the medium cylinder and a coil box covering the coil. The cooling mechanism comprises a first gas inlet and a first gas outlet, wherein the first gas inlet is arranged at the bottom part of the side wall of the coil box for conveying a cooling gas to the coil box; and the first gas outlet is arranged on the top wall of the coil box for exhausting the cooling gas in the coil box. According to the plasma source cooling mechanism provided by the invention, the resistance of heat convection can be reduced, the heat convection speed is improved, and the cooling ability of the equipment can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a cooling mechanism of a plasma source and semiconductor processing equipment. Background technique [0002] In order to achieve a higher etching selectivity and etching rate, current semiconductor processing equipment often uses a remote high density plasma (remote high density plasma, Remote HDP) plasma source, which applies power to the radio frequency coil (stereo coil ) under the action of the plasma generation chamber (because it is made of insulating materials such as ceramics and has a cylindrical structure, so it is hereinafter referred to as "dielectric cylinder") to generate plasma. [0003] figure 1 It is a cross-sectional view of an existing semiconductor processing equipment. Such as figure 1 shown. Semiconductor processing equipment comprises reaction chamber and plasma source, wherein, reaction chamber is made of side wall 7 and the top cover 6 that ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H05H1/28
CPCH01L21/67011H05H1/28H01J37/321H01J37/3211H01J37/32449H01J37/32467H01J37/32522H01J37/3244H01J2237/002H01L21/67017
Inventor 孙宝林
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD