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Preparation method for inverted trapezoidal section photoresist mask on large-area glass substrate

A glass substrate, large-area technology, applied in photoengraving process coating equipment, photosensitive material processing, semiconductor/solid-state device manufacturing, etc., can solve the problem that the image reversal process cannot use the inverted trapezoidal cross-section photoresist mask, etc. , to achieve the effect of easy promotion, good repeatability, and avoidance of bursting

Inactive Publication Date: 2018-02-16
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention solves the technical problem that the existing image inversion process cannot be applied to a large-area glass substrate to prepare a photoresist mask with an inverted trapezoidal cross-section, and provides a method for preparing a photoresist mask with an inverted trapezoidal cross-section on a large-area glass substrate method

Method used

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  • Preparation method for inverted trapezoidal section photoresist mask on large-area glass substrate
  • Preparation method for inverted trapezoidal section photoresist mask on large-area glass substrate
  • Preparation method for inverted trapezoidal section photoresist mask on large-area glass substrate

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Effect test

Embodiment 1

[0038] Example 1: Combining image 3 Illustrate the preparation method of the inverted trapezoidal section photoresist mask on a kind of large-area glass substrate provided by the present invention:

[0039] 1) Cleaning the large-area glass substrate 1 .

[0040] 2) Spin-coat AZ5214 photoresist 2 on the surface of a large-area glass substrate 1;

[0041] Spin-coat the photoresist 2 with a coater at a speed of 2500 rpm, spin-coat the AZ5214 reverse photoresist 2 on the large-area glass substrate 1 for 10 seconds, and then bake it in an ordinary oven at 60°C Bake large-area glass substrates for 1 30 minutes, and samples such as image 3 Shown in a.

[0042] 3) Expose the photoresist plate 3 with the pattern in close contact with the photoresist 2 on the surface of the large-area glass substrate 1, and the exposure time is 6 seconds. After completion, the sample is as follows: image 3 Shown in b.

[0043]4) Bake the exposed large-area glass substrate 1 in a common oven at a...

Embodiment 2

[0047] 1) Cleaning the large-area glass substrate.

[0048] 2) Spin-coat AZ5214 photoresist on the surface of a large-area glass substrate;

[0049] Spin-coat the photoresist with a coater at a speed of 1000 rpm, spin-coat the AZ5214 reverse photoresist on a large-area glass substrate for 10 seconds, and then bake the large-area in a common oven at 60°C 20 points for a glass substrate.

[0050] 3) Expose the photolithographic plate with the pattern in close contact with the photoresist of the large-area glass substrate, and the exposure time is 6 seconds.

[0051] 4) Baking the exposed large-area glass substrate in a common oven at a temperature of 115° C. for 6 minutes.

[0052] 5) The photoresist spin-coated on the surface of the large-area glass substrate after baking is subjected to flood exposure under an exposure machine, and the exposure time is 55 seconds.

[0053] 6) The large-area glass substrate after flood exposure was developed in AZ5214 developer solution for ...

Embodiment 3

[0055] 1) Cleaning the large-area glass substrate.

[0056] 2) Spin-coat AZ5214 photoresist on the surface of a large-area glass substrate;

[0057] Spin-coat the photoresist with a coater at a speed of 4000 rpm, spin-coat the AZ5214 reverse photoresist on a large-area glass substrate for 10 seconds, and then bake the large-area in a common oven at 80°C 40 points for glass substrates.

[0058] 3) Expose the photolithographic plate with the pattern in close contact with the photoresist of the large-area glass substrate, and the exposure time is 10 seconds.

[0059] 4) Baking the exposed large-area glass substrate in a common oven at a temperature of 130° C. for 10 minutes.

[0060] 5) The photoresist spin-coated on the surface of the large-area glass substrate after the second baking is subjected to flood exposure under an exposure machine, and the exposure time is 30 seconds.

[0061] 6) The large-area glass substrate after flood exposure was developed in AZ5214 developer f...

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Abstract

The invention relates to a preparation method for an inverted trapezoidal section photoresist mask on a large-area glass substrate, relates to the technical field of a semiconductor photoelectronic device, and solves the technical problem that the existing picture inversion process cannot be applied to preparation of the inverted trapezoidal section photoresist mask on the large-area glass substrate. The invention provides the preparation method for the inverted trapezoidal section photoresist mask on the large-area glass substrate; the inverted trapezoidal section photoresist can be obtainedby a common drying oven, so that cracking of the large-area glass substrate caused by a heating plate can be avoided, and the problem that photoetching reversion cannot be realized on the large-area glass substrate to form the inverted trapezoidal section of the photoresist can be solved; and meanwhile, the technology for preparing the inverted trapezoidal section photoresist is wide in technological conditions, high in repeatability, simple, convenient and easy to implement, free of toxic and harm, and convenient to popularize.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a method for preparing a photoresist mask with an inverted trapezoidal cross-section on a large-area glass substrate. Background technique [0002] In the fabrication process of optoelectronic devices, especially with the improvement of device integration, the pattern size is usually in the micron or even submicron range, making the lift-off process more vital and valuable than the etching process in the device fabrication process. [0003] The so-called lift-off technology refers to firstly coating one or more photosensitive mask layers on the clean wafer surface, and after performing different forms of exposure, baking, development, post-baking and other processes on it, the surface of the substrate will be The photoresist masking geometry is obtained, then by methods such as evaporation or sputtering. Deposit desired thin film material, such as me...

Claims

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Application Information

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IPC IPC(8): G03F7/16G03F7/26
CPCG03F7/16G03F7/26
Inventor 孙晓娟黎大兵贾玉萍刘贺男宋航李志明陈一仁缪国庆蒋红张志伟
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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