A cooling tray device and wafer etching equipment

Abstract

The invention provides a heat dissipation tray apparatus and wafer etching equipment, and relates to the technical field of micro-electronics. The wafer etching equipment comprises an equipment shell,an objective table and the heat dissipation tray apparatus; the heat dissipation tray apparatus comprises a cover plate and a tray; the cover plate detachably covers the tray; a ventilating groove and at least one wafer-loading groove are formed in the tray; each wafer-loading groove is used for accommodating the corresponding wafer; cooling gas through holes for pumping cooling gas are formed inthe bottom of the ventilating groove; an air inlet channel is formed in the bottom of each wafer-loading groove; the ventilating groove is connected with the air inlet channels to allow the cooling gas to enter the wafer-loading grooves; the equipment shell covers the objective table; the tray is detachably connected to the objective table; a cooling gas channel is formed in the objective table;the cooling gas through holes are connected with the cooling gas channel. Compared with the prior art, the heat dissipation tray apparatus provided by the invention allows the cooling gas to uniformlyenter the wafer-loading grooves to cool the wafer-loading grooves, so that a very remarkable heat dissipation effect is achieved.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a heat dissipation tray device and wafer etching equipment. Background technique [0002] Plasma processing equipment is a common equipment for processing semiconductor devices. During the process of etching, sputtering and chemical vapor deposition, etc., in order to improve the production efficiency of plasma processing equipment and reduce production costs, generally larger size The tray is used to carry multiple wafers and transport them to the reaction injection chamber at the same time, so as to realize the simultaneous processing of multiple wafers. [0003] At present, the general-purpose tray usually has a plurality of air intake holes on the tray, and the following problems inevitably exist in practical applications, namely: since the middle air intake holes are scattered at the loading position, the heat exchange gas diffuses to the surroundings through the ai...

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Problems solved by technology

[0003] At present, the general-purpose tray usually has a plurality of air intake holes on the tray, and the following problems inevitably exist in practical applications, namely: since the middle air intake holes are scattered at the loading position, the heat exchange gas diffuses to the surroundings through the air intake holes. The diffusion radius tends to evenly reach all areas of the loading position. Due to the small gas flow rate in the hole, the temperature of the etching area at the loading position rises rapidly during the high-power etching process, and the surface temperature of the wafer far exceeds the temperature required by the process. It leads to the failure of the etching process and affects the performance of the plasma processing equipment. The temperature difference between the regions leads to poor temperature uniformity at the loading position, which affects the process uniformity of the plasma processing equipment.

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