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Preparation method of three-dimensional memory and structure of three-dimensional memory

A memory, three-dimensional technology, applied in electric solid devices, semiconductor devices, electrical components, etc., can solve the problems of short circuit, insufficient conductive metal filling, affecting conductive metal filling, etc., to increase the process window, solve the problem of insufficient through-hole window, The effect of improving yield

Inactive Publication Date: 2018-02-16
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

like Image 6 As shown, in the existing process, the process window (window) of the through hole 20 above the array common source 1 (ACS, Array Common Source) is affected by the line width of the array common source 18, and the size of the through hole 20 window cannot be Exceeding the scale of the line width of the common source 18 of the array, the diameter of the through hole 20 is reduced due to the continuous reduction of the line width of the common source 18 of the array, and the diameter of the through hole 20 that is too small will affect the conductive metal in the through hole. Filling, resulting in insufficient filling of conductive metal in the through hole, resulting in short circuit phenomenon, which affects the normal operation of the storage device

Method used

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  • Preparation method of three-dimensional memory and structure of three-dimensional memory
  • Preparation method of three-dimensional memory and structure of three-dimensional memory
  • Preparation method of three-dimensional memory and structure of three-dimensional memory

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Embodiment 1

[0023] refer to Figure 7 As shown, Embodiment 1 of the present invention proposes a method for preparing a three-dimensional memory, which is characterized in that it includes the following steps:

[0024] A substrate 10 is provided, on which an array storage area of ​​a three-dimensional memory is formed;

[0025] The display storage area for forming a three-dimensional memory includes a multi-layer stack structure 13 in which silicon nitride layers 11 and silicon dioxide layers 12 are alternately formed on the substrate 10; through holes 14 are formed in the multi-layer stack structure 13, The bottom of the through hole 14 exposes the substrate 10, and the silicon nitride layer 11 is etched away; the position of the removed silicon nitride layer is filled with metal, such as metal tungsten, and isolation etching is performed, Form a metal gate layer 15; deposit a silicon dioxide layer dielectric layer 16 on the sidewall of the through hole, and form a channel region 17 in ...

Embodiment 2

[0028] Embodiment 2 of the present invention proposes a method for manufacturing a three-dimensional memory. In this embodiment, parts that are different from the above embodiments will be described, and the same parts will not be described again.

[0029] Preferably, the aperture of the contact hole is smaller than the width of the common source of the array at the contact hole, and the aperture of the contact hole is equal to or greater than the width of other positions of the common source of the array.

[0030] The width of the array common source located at the contact hole is 100 to 5000 angstroms. The diameter of the contact hole is 90 angstroms to 4900 angstroms.

[0031] For example, preferably, the diameter of the contact hole is 100 angstroms, the width of the corresponding array common source at the contact hole is 120 angstroms, and the width of the array common source at other positions is 90 angstroms.

[0032] Or, preferably, the diameter of the contact hole i...

Embodiment 3

[0038]Embodiment 3 of the present invention proposes a method for manufacturing a three-dimensional memory. In this embodiment, parts different from the above embodiments will be described, and the same parts will not be repeated.

[0039] The shape of the array common source located at the contact hole is similar to the shape of the contact hole. Preferably, the shape of the array common source at the contact hole is rectangle, rhombus, circle, ellipse or polygon.

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Abstract

The invention provides a preparation method of a three-dimensional memory and a structure of the three-dimensional memory. The method comprises the steps of providing a substrate and forming an arraymemory area of the three-dimensional memory on the substrate; forming array common sources and contact holes electrically connected with the array common sources in the array memory area, wherein thewidths, in the contact holes, of the array common sources are greater than those of other positions of the array common sources. Through the preparation method, the problem that windows of through holes are insufficient can be solved through adding process windows of the through holes among the array common sources, thereby further improving the yield of a product.

Description

technical field [0001] The invention relates to the field of semiconductor devices and their manufacture, in particular to a preparation method and structure of a three-dimensional memory. Background technique [0002] With the continuous improvement of market demand for memory capacity, the number of memory cells that can be provided per unit area by traditional memory based on planar or two-dimensional structures is approaching the limit, which cannot further meet the market demand for larger capacity memory. Just like several bungalows built on a limited plane, these bungalows are neatly arranged, but as the demand continues to increase, the number of bungalows continues to blow out, but in the end this limited plane can only accommodate a certain number of bungalows. Cannot continue to increase. Planar memory is approaching its practical expansion limit, which brings severe challenges to the semiconductor memory industry. [0003] In order to solve the above difficulti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11521H01L27/11551H10B41/30H10B41/20
CPCH10B41/20H10B41/30
Inventor 邵明徐强李广济宋豪杰
Owner YANGTZE MEMORY TECH CO LTD