Mid-infrared narrow-band tunable filter

A technology for tuning filters and narrow-band filters, applied in instruments, nonlinear optics, optics, etc., to meet the needs of dynamic changes in reflection peak positions

Inactive Publication Date: 2018-02-23
ANHUI UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

On the other hand, graphene is a quasi-two-dimensional material with a single atomic layer thickness, which has excellent strength, flexibility, electrical conductivity, thermal conductivity, and optical properties, especially its electrical conductivity can be changed by the applied voltage, so as to realize the operation of optoelectronic devices State control, and because of the ease of operation of the graphene-based photoelectric device electronic control scheme, the graphene-based mid-infrared filter has great practical value, but the bandwidth of the existing graphene-based mid-infrared band filter is in the Above 10nm (Plasmonics (2014) 9:1239-1243), in order to improve the filter resolution, it is particularly urgent to develop tunable filters with narrower bandwidth

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Embodiment 1

[0026] The parameters of a periodic structure of the filter are p=2000nm, w=1000nm, t 1 = t 2 =3000nm, h=230nm, ambient temperature is 300K, graphene relaxation time is 1ps, dielectric film layer and grating layer material are tantalum pentoxide (refractive index 2.0), substrate is silicon dioxide (refractive index 1.44) .

[0027] Using the rigorous coupled wave analysis method, the calculated reflection results are as follows figure 2 As shown, the reflection bandwidth is less than 1.0nm, the tuning graphene Fermi energy is from 0.2eV to 1.0eV, and the corresponding reflection peak is tuned from 3.95825μm to 3.95079μm. It can be seen that the device can tune the reflection peak of the filter by changing the graphene Fermi energy.

Embodiment 2

[0029] The parameters of a periodic structure of the filter are p=2000nm, w=1000nm, t 1 = t 2 =3000nm, h=200nm or 260nm, ambient temperature is 300K, graphene relaxation time is 1ps, dielectric film layer and grating layer material are tantalum pentoxide (refractive index 2.0), substrate is silicon dioxide (refractive index 1.44).

[0030] Using the rigorous coupled wave analysis method, the calculated reflection results are as follows image 3 As shown, the reflection bandwidth is still less than 1.0nm, and the tuning graphene Fermi energy is from 0.2eV to 1.0eV. When h=200nm, the corresponding reflection peak is tuned from 3.9582μm to 3.9507μm, see image 3 (a); when h=260nm, the corresponding reflection peak is tuned from 3.9583μm to 3.9509μm, see image 3 (b).

Embodiment 3

[0032] The parameters of a periodic structure of the filter are p=2000nm, w=800nm ​​or 1200nm, t 1 = t 2 =3000nm, h=230nm, ambient temperature is 300K, graphene relaxation time is 1ps, dielectric film layer and grating layer material are tantalum pentoxide (refractive index 2.0), substrate is silicon dioxide (refractive index 1.44) .

[0033] Using the rigorous coupled wave analysis method, the calculated reflection results are as follows Figure 4 As shown, the reflection bandwidth is still less than 1.0nm, and the tuning graphene Fermi energy is from 0.2eV to 1.0eV. When w=800nm, the corresponding reflection peak is tuned from 3.95826μm to 3.95078μm, see Figure 4 (a); when w=1200nm, the corresponding reflection peak is tuned from 3.9583μm to 3.95082μm, see Figure 4 (b).

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Abstract

The invention discloses a mid-infrared narrow-band tunable filter. The mid-infrared narrow-band tunable filter comprises a substrate and is characterized in that a first dielectric plating layer is arranged on the substrate, graphene is arranged on the first dielectric plating layer, a second dielectric plating layer is arranged on the graphene, a third dielectric plating layer is arranged on thesecond dielectric plating layer, and the third dielectric plating layer is etched into a grating layer. The novel mid-infrared narrow-band tunable filter has the advantages that graphene Fermi energychange is achieved by using the features of the graphene and changing static bias voltage, and accordingly transverse electric (TE) polarized light tunable narrow-band reflection is achieved, and therequirement of reflection peak position dynamic change is satisfied.

Description

technical field [0001] The invention relates to the field of micro-nano optical devices, in particular to a mid-infrared narrow-band tunable filter. Background technique [0002] Since the atmospheric transmission window and the fundamental frequency reflection bands with fingerprint characteristics of most gas molecules are distributed in the mid-infrared band, the research on mid-infrared band spectroscopy and its related equipment and devices has great significance in many aspects such as space optical communication, atmospheric environment monitoring and medical diagnosis. Broad application prospects. The function of the filter is to select a specific required wavelength from a large number of wavelengths. Generally, it can be used to select wavelengths, suppress the noise of optical amplifiers, and add optical multiplexing / demultiplexing. Non-dispersive infrared is another filter in the mid-infrared band. Typical applications, but the filter is generally a fixed wavele...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01
CPCG02F1/0136G02F1/0142
Inventor 廖艳林赵艳
Owner ANHUI UNIVERSITY
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