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Mixed bonding method having metal wire, and mixed bonding structure

A metal connection and hybrid bond technology, which is applied in the field of hybrid bonding structure, can solve the problems of increasing process cost, use, and inability to metal connection, and achieves the effect of reducing the bonding metal layer and reducing the process cost.

Active Publication Date: 2018-02-23
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the hybrid bonding process requires the use of special design rules to achieve the effect of cooperating with the interface treatment. Among them, the formed bonding metal layer is only used for the connection of metal contacts, and cannot be used as a metal connection. Maximize utilization and improve process cost

Method used

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  • Mixed bonding method having metal wire, and mixed bonding structure
  • Mixed bonding method having metal wire, and mixed bonding structure
  • Mixed bonding method having metal wire, and mixed bonding structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] According to an embodiment of the present invention, a hybrid bonding method with metal wiring is provided, such as figure 1 shown, including:

[0041] providing a first wafer and a second wafer, the first wafer has an upper substrate to be bonded, and the second wafer has a lower substrate to be bonded;

[0042] Forming a first bonding layer on the upper substrate of the first wafer, forming a second bonding layer on the lower substrate of the second wafer, in the first bonding layer, and / or in the second bonding layer Performing metal deployment and forming a bonding metal layer, using the bonding metal layer as a metal connection, and forming a basic connection layer corresponding to the metal connection;

[0043] The first bonding layer of the first wafer is bonded to the second bonding layer of the second wafer to form a hybrid bonding structure.

[0044] According to an embodiment of the present invention, both the first bonding layer and the second bonding laye...

Embodiment approach

[0051] According to an embodiment of the present invention, the method further includes: forming a basic wiring layer corresponding to the switch metal layer;

[0052] Correspondingly, in the hybrid bonding structure formed by bonding, the switch metal layer is connected to the bonding metal contact and the corresponding basic wiring layer.

[0053] According to an embodiment of the present invention, forming a basic wiring layer corresponding to the metal wiring, specifically: forming a connection structure and a basic wiring layer corresponding to the metal wiring;

[0054] Correspondingly, in the hybrid bonding structure formed by bonding, the metal wiring is connected to the corresponding basic wiring layer through the connecting structure.

[0055] According to the embodiment of the present invention, it also includes: performing redundant filling (Dummy Filling) on ​​the metal connection;

[0056] Further, the difference between the metal density of the redundant filled...

Embodiment 2

[0060] According to an embodiment of the present invention, a hybrid bonding structure with metal wiring is provided, including:

[0061] A first wafer and a second wafer arranged oppositely, the first wafer has an upper substrate for bonding, and the second wafer has a lower substrate for bonding;

[0062] a first bonding layer on the upper substrate of the first wafer, a second bonding layer on the lower substrate of the second wafer;

[0063] The metal arrangement located in the first bonding layer and / or the second bonding layer, the bonding metal layer as the metal wiring, and the basic wiring layer corresponding to the metal wiring.

[0064] According to an embodiment of the present invention, the metal layout located in the first bonding layer and / or in the second bonding layer specifically includes:

[0065] a plurality of metal blocks located in the first bonding layer, and / or in the second bonding layer;

[0066] a switch metal layer located in the first bonding la...

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Abstract

The invention discloses a mixed bonding method having metal wire, and a mixed bonding structure, which belong to the technical field of semiconductors. The method comprises the steps of providing a first wafer and a second wafer, wherein the first wafer has an upper substrate to be bonded, and the second wafer has a lower substrate to be bonded; forming a first bonding layer on the upper substrateof the first wafer, and forming a second bonding layer on the lower substrate of the second wafer; conducting metal disposition in the first bonding layer and / or the second bonding layer, and forminga bonding metal layer, and using the bonding metal layer as a metal wire, and forming a basic connecting line layer corresponding to the metal wire; conducting bonding on the first bonding layer of the first wafer and on the second bonding layer of the second wafer, and forming a mixed bonding structure. The invention is advantageous in that the present bonding metal layer only used for metal contact is used for the metal wire, and thereby the metal layer is reduced, and one or two layers of optical cover required for the producing of the metal wire can be saved, and technology cost can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a hybrid bonding method and a hybrid bonding structure with metal wiring. Background technique [0002] With the development of people's requirements for electronic products in the direction of miniaturization, multi-function, and environmental protection, people strive to make electronic systems smaller and more integrated, with more and more functions and stronger . As a result, many new technologies, new materials and new designs have emerged, such as three-dimensional stacked packaging and other technologies are typical representatives of these technologies. As the development of VLSI is approaching the physical limit, 3D integrated circuits with advantages in physical size and cost are an effective way to extend Moore's Law and solve advanced packaging problems. With the continuous advancement of Moore's Law, after the process node below 20 nanometers, it becomes mo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/18H01L21/60
CPCH01L21/185H01L24/10H01L24/42
Inventor 吕震宇朱继锋李勇娜宋立东陈俊
Owner YANGTZE MEMORY TECH CO LTD
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