Insulated gate bipolar transistor, making method of terminal structure thereof, IPM module and air conditioner

Abstract

The invention discloses an insulated gate bipolar transistor, a making method of a terminal structure thereof, an IPM module and an air conditioner. Specifically, the making method of the terminal structure sequentially comprises the steps that a field limiting ring structure is etched in a terminal zone of the insulated gate bipolar transistor to form an ion injection window; P-type ion injectionis conducted on the field limiting ring structure; well pushing is conducted on the field limiting ring structure undergoing the P-type ion injection, wherein the well pushing temperature is 1050-1150 DEG C, and the well pushing time is 30-80 minutes. By adopting the technical scheme, the voltage resistant capability of the insulated gate bipolar transistor is improved under the condition that the structure and size of a terminal are not changed, and accordingly the voltage resistant capability of the insulated gate bipolar transistor is improved by optimizing the well pushing conditions of afield limiting ring of the terminal.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a manufacturing method of an insulated gate bipolar transistor and its terminal structure, an IPM module and an air conditioner. Background technique [0002] Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, referred to as IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET). , which has the advantages of high input impedance of MOSFET devices and low conduction voltage drop of power transistors (giant transistors, referred to as GTRs). Since insulated gate bipolar transistors have the advantages of small driving power and low saturation voltage, current insulation As a new type of power electronic device, gate bipolar transistor is widely used in various fields. [0003] The insulated gate bipolar transistor is composed of tens of thousands ...

AI Technical Summary

Problems solved by technology

At such a shallow junction depth, if no terminal protection measures are added to the IGBT device, the breakdown voltage will be 50% lower than the withstand voltage value of the parallel planar junction under ideal conditions.

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