Protection fixture and grinding method of electrostatic chuck

Abstract

The invention discloses a protection jig for an electrostatic chuck and a grinding method. The protection jig for the electrostatic chuck comprises a jig main body and a fixing part, wherein the jig main body covers a central area of the electrostatic chuck and a marginal area of the electrostatic chuck is exposed; the marginal area surrounds the central area; and the fixing part is suitable for fixing the jig main body on the electrostatic chuck. According to the protection jig, the electrostatic chuck can be prevented from being excessively ground, and the protection jig is conducive to keeping the absorption capability of the electrostatic chuck.

Description

technical field [0001] The invention relates to the field of semiconductor equipment, in particular to a protective jig and a polishing method for an electrostatic chuck. Background technique [0002] In the existing physical vapor deposition (Physical Vapor Deposition, PVD) sputtering process, usually under vacuum conditions, low-voltage, high-current arc discharge technology is used to make high-energy particles hit the target with high purity by gas discharge. A solid flat plate of material is knocked out of atoms according to the physical process, and the knocked out atoms are deposited on the silicon wafer. Wherein, the silicon wafer is fixed by an electrostatic chuck using electrostatic attraction. [0003] However, due to process limitations, metal will be deposited on the edge of the electrostatic chuck, and when the deposition is excessive, the electrostatic adsorption capacity will decrease, and even the silicon wafer will be tilted due to the uneven thickness of ...

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Problems solved by technology

[0003] However, due to process limitations, metal will be deposited on the edge of the electrostatic chuck, and when the deposition is excessive, the electrostatic adsorption capacity will decrease, and even the silicon wafer will be tilted due to the uneven thickness of metal deposited under the silicon wafer, which will affect the performance of the device.

[0004] When maintaining the electrostatic chuck, it is necessary to polish the edge surface of the electrostatic chuck. However, in the existing grinding technology, it is easy to grind to the non-edge position of the electrostatic chuck, resulting in excessive grinding of the electrostatic chuck, resulting in a decrease in adsorption performance, which seriously risk of obsolescence

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