DIsplay Device
A technology for display devices and semiconductors, which is applied to electrical components, electrical solid-state devices, circuits, etc., and can solve problems such as inability to combine, no circuit design, and low leakage.
Active Publication Date: 2018-03-13
INNOLUX CORP
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Problems solved by technology
The thin film transistor structure in the display can be a polysilicon thin film transistor with high carrier mobility characteristics, or a metal oxide thin film transistor with low leakage characteristics. The current display still cannot combine these two transistors, and there is no related circuit design
Method used
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Embodiment Construction
[0101] figure 1 It is a schematic diagram of the display device of the present invention. As shown in the figure, the display device 100 includes a gate driver 110, a source driver 120 and a plurality of pixels P 11 ~P mn . The gate driver 110 is used to provide the scan signal S 1 ~S n . The source driver 120 is used to provide the data signal D 1 ~D m . Each pixel receives corresponding scan signal and data signal. For example, a pixel P 11 Receive scan signal S 1 with the data signal D 1 . In this embodiment, the pixel P 11 ~P mn Each has an organic light emitting diode (Organic Light Emitting Diode; OLED).
[0102] The present invention does not limit the pixel P 11 ~P mn circuit architecture. In a possible embodiment, the pixel P 11 ~P mn Each has a storage capacitor for storing a driving voltage. The driving voltage is used to light up the corresponding organic light emitting diodes. Figure 2A is a possible embodiment of the pixel of the present in...
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The invention discloses a display device. The display device includes a substrate, a first transistor, a second transistor and a first capacitance electrode. The first transistor is arranged above thesubstrate and comprises a first semiconductor layer, a first gate electrode and a first gate insulation layer. The first semiconductor layer comprises a silicon semiconductor layer. The first gate electrode is stacked with the first semiconductor layer. The first gate electrode insulation layer is arranged between the first semiconductor layer and the first gate electrode layer. The second transistor is arranged above the substrate and comprises a second semiconductor layer and a second gate electrode. The second semiconductor layer comprises a first oxidized semiconductor layer. The second gate electrode and the second semiconductor layer are stacked. The first capacitance electrode is stacked with the second gate electrode. The first gate insulation layer is arranged above the first capacitance electrode.
Description
technical field [0001] The present invention relates to a semiconductor structure, in particular to a semiconductor structure of a display device. Background technique [0002] Due to the advantages of thin volume, light weight and low radiation, flat panel displays have been widely used in recent years. The thin film transistor structure in the display can be a polysilicon thin film transistor with high carrier mobility characteristics, or a metal oxide thin film transistor with low leakage characteristics. The current display still cannot combine these two transistors, and there is no related circuit design. Contents of the invention [0003] The invention provides a display device, which includes a substrate, a first transistor, a second transistor and a first capacitor electrode. The first transistor is disposed on the substrate and includes a first semiconductor layer, a first gate electrode and a first gate insulating layer. The first semiconductor layer includes ...
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IPC IPC(8): H01L27/12H01L27/32
CPCH01L27/1255H01L27/1222H01L27/1225H10K59/123H10K59/1213H10K50/805H10K10/46H10K50/30H10K59/126H10K59/1216H10K10/00H10K30/353
Inventor 刘敏钻蔡煜生
Owner INNOLUX CORP