Crystal height measuring device for polycrystalline silicon ingot furnace

Abstract

The invention discloses a crystal height measuring device which rapidly and accurately detects the residual height of a bottom seed crystal. The crystal height measuring device comprises a sealing flange arranged on a furnace, a measuring quartz rod is movably arranged in the sealing flange in a penetrating manner and can stay in the sealing flange at any positions, a measuring support is arrangedon the upper portion of the outer side of the furnace, measuring scales are arranged on the measuring support, an upper limit device is arranged on the measuring support, the position of the upper limit device can be vertically adjusted, a lower limit device is arranged on the measuring support, upper and lower positions of the lower limit device can be adjusted, the distance between the lower limit device and the upper surface of the sealing flange is a difference value between the length of the quartz rod and the distance from the set thickness surface of the seed crystal to the upper surface of the sealing flange, a limit plate is arranged at the top of the quartz rod and positioned between the upper limit device and the lower limit device and sleeves the measuring support, and the distance value between the upper limit device and the lower limit device is larger than or equal to the distance value between the upper surface of the seed crystal after crystallization and the top surface of a top heat insulating layer and smaller than the length value of the quartz rod.

Description

technical field [0001] The invention relates to a crystal height measuring device for a polycrystalline silicon ingot furnace. Background technique [0002] In the semi-melted polysilicon ingot casting process, the polysilicon fragments are used as seed crystals on the bottom of the crucible, the melting speed of the silicon material is controlled during the melting process, and a certain thickness of silicon material remains at the bottom at the end of the melting step, and the remaining silicon material is used as a long-term The seeding material required by the ingot, and the accurate measurement of the melting degree of the seed crystal becomes the main factor determining the quality of the silicon ingot. [0003] The current measurement method is to insert a quartz rod into the molten silicon liquid, and as the quartz rod descends, the cable tie as a reference object moves upwards, and when it touches the seed crystal, the quartz rod is lifted immediately, and the dista...

AI Technical Summary

Problems solved by technology

However, when the glass rod is lifted, it will affect the position of the cable tie, thereby affecting the accuracy of the measurement

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