Preparation method for diluted magnetic semiconductor material

Abstract

The embodiment of the invention discloses a preparation method for a diluted magnetic semiconductor material. The method comprises the following steps: an epitaxial layer is prepared on a substrate material, so that a base material is obtained; the base material is then placed in a high-energy ion implanter; first ions are implanted into the epitaxial layer with a first energy and a first dosage,and second ions are then implanted into the epitaxial layer with a second energy and a second dosage, so that a doped material is obtained; and the doped material is placed in a quick annealing oven and is annealed at a first temperature for a first period. Compared with the single-energy state ion implantation method in the prior art, the method provided by the invention has the advantages that dual-energy state ion implantation is adopted, that is, the ions are implanted into a semiconductor substrate with the different energies and the different dosages, so that the magnetic ions can be more uniformly distributed in the longitudinal direction of a diluted magnetic semiconductor film, better ferromagnetic property can be achieved through a lower dosage of the magnetic ions, and the diluted magnetic semiconductor material can be more widely applied in discrete devices and integrated circuits.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of semiconductor material preparation, in particular to a method for preparing a dilute magnetic semiconductor material. Background technique [0002] Semiconductor materials and magnetic materials are two important types of materials that are indispensable in modern information technology. Combining magnetic properties with semiconductor properties to manufacture new functional devices is a very important branch of the development of magnetoelectronics. Therefore, the magnetization of existing semiconductor materials is very meaningful from the perspective of material practicality and fundamental physics. [0003] At present, the single energy state ion implantation method is a common method for preparing ferromagnetic semiconductor thin film materials. This method is to implant ferromagnetic ions into the semiconductor substrate to obtain a ferromagnetic semiconductor thin film. ...

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Problems solved by technology

[0004] However, the magnetic elements of the dilute magnetic semiconductor material prepared by the ion implantation method of a single energy state are Gaussian distributed in the direction of the film depth, and the application of the device prepared by using the dilute magnetic semiconductor thin film is also limited; and the single energy state The dose of magnetic elements required by the state ion implantation method is relatively large

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