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Nitrogen-Containing Semiconductor Device

一种半导体、元件的技术，应用在含氮半导体元件领域，能够解决晶格差异、半导体层磊晶质量降低等问题，达到改善晶格结构、改善磊晶质量的效果

Active Publication Date: 2018-03-27
NICHIA CORP
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the difference between the lattice of the semiconductor layer made of gallium nitride or aluminum gallium nitride and the lattice of the substrate, the epitaxial quality of the semiconductor layer is often reduced.

Method used

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  • Nitrogen-Containing Semiconductor Device
  • Nitrogen-Containing Semiconductor Device
  • Nitrogen-Containing Semiconductor Device

Examples

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Embodiment Construction

[0041] figure 1 is a schematic cross-sectional view of a nitrogen-containing semiconductor device according to the first embodiment of the present invention. Please refer to figure 1 The nitrogen-containing semiconductor device 100 a of this embodiment includes a substrate 110 , a first AlGaN buffer layer 120 , a second AlGaN buffer layer 130 and a semiconductor stack layer 140 . The first aluminum gallium nitride buffer layer 120 is disposed on the substrate 110, and the chemical formula of the first aluminum gallium nitride buffer layer 120 is Al x Ga 1-x N, where 0≦x≦1. In particular, the first AlGaN buffer layer 120 of this embodiment is doped with a concentration exceeding 5×10 17 cm -3 Oxygen with concentrations exceeding 5 x 10 17 cm -3 At least one of the two carbons. The second AlGaN buffer layer 130 is disposed on the first AlGaN buffer layer 120, and the chemical general formula of the second AlGaN buffer layer 130 is Al y Ga 1-y N, where 0≦y≦1. The semic...

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Abstract

A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0<=x<=1. The firstAlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5x1017 cm<3> and carbon having a concentration greater than 5x1017 cm<3>. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0<=y<=1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.

Description

technical field [0001] The present invention relates to a semiconductor element, and in particular to a nitrogen-containing semiconductor element. Background technique [0002] In general semiconductor devices, in order to increase the probability of electron-hole combination and improve electron barrier, aluminum indium gallium nitride (AlInGaN) is placed between the active layer and the P-type semiconductor x In y Ga 1-x-y N) nitrogen-containing quaternary semiconductor layer. However, due to the difference between the lattice of the semiconductor layer made of GaN or AlGaN and the lattice of the substrate, the epitaxial quality of the semiconductor layer is often reduced. Therefore, how to effectively improve the epitaxial quality of the nitrogen-containing semiconductor layer is still one of the problems that need to be improved urgently. Contents of the invention [0003] The invention provides a nitrogen-containing semiconductor element with good epitaxial qualit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/12
CPCH01L33/12H01L33/32H01L29/205H01L33/04
Inventor 方信乔吕政学林政宏郑季豪黄吉豊
Owner NICHIA CORP
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