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Acid texturing additive special for DWS (Diamond Wire Saw) polycrystalline silicon chip

A technology of diamond wire cutting and polysilicon wafers, which is applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve the problems of uneven distribution of surface defects, uniform corrosion of texturing process, etc., and achieve good practical application value , easy to implement, good stability

Inactive Publication Date: 2018-03-30
宁波道乐新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The surface of the mortar wire-cut silicon wafer is mainly irregular pits, and the distribution of defects is good, so the HF-HNO 3 -H 2 Texture process of O system can obtain uniformly corroded textured surface, but the surface of silicon wafer cut by diamond wire is a mixture of irregular pits and smooth cutting marks, and the distribution of surface defects is uneven. Through conventional HF-HNO 3 -H 2 O's texture making process can't get a uniformly corroded texture

Method used

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  • Acid texturing additive special for DWS (Diamond Wire Saw) polycrystalline silicon chip
  • Acid texturing additive special for DWS (Diamond Wire Saw) polycrystalline silicon chip
  • Acid texturing additive special for DWS (Diamond Wire Saw) polycrystalline silicon chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Embodiment 1 (reference group)

[0021] This embodiment provides a reference example, which is a conventional texturing process without additives:

[0022] Take the following steps;

[0023] 1) Prepare the acid velvet solution, under stirring, 2L of hydrofluoric acid with a concentration of 49%, 6L of nitric acid with a concentration of 65-68% and 3L of deionized water are mixed evenly;

[0024] 2) Texturing: immerse the diamond wire-cut polysilicon wafer in the above acidic texturing solution for texturing, the texturing temperature is 8-10°C, and the texturing time is 25s.

[0025] 3) The surface reflectance of the diamond wire-cut polysilicon wafer after texturing is 40%. figure 1 The scanning electron microscope picture of the surface of the diamond wire-cut polysilicon wafer obtained by the conventional process is given. In the picture, the textured surface is uneven in size and uneven in distribution.

Embodiment 2

[0026] Embodiment 2 (additive group is arranged)

[0027] This embodiment adopts the following steps:

[0028] a) Preparation of additives: under stirring, 1.0g xanthan gum, 1.0g tannic acid and 0.2g silicon-based surfactants are dissolved in 97.8 g deionized water (that is: in the prepared additives, the The weight content of water-soluble xanthan gum is 1%, the weight content of the tannic acid is 1%, and the weight content of silicon-based surfactant is 0.2%)

[0029] b) Preparation of acidic texturing solution: under stirring, mix 2 L of hydrofluoric acid with a concentration of 49%, 6 L of nitric acid with a concentration of 65-68% and 3 L of deionized water, and then add 110 ml of the above-mentioned Additives, stir well

[0030] c) Texturing: immerse the diamond wire-cut polysilicon wafer in the above acid texturing solution for texturing, the texturing temperature is 8-10°C, and the texturing time is 45s.

[0031] d) The surface reflectance of the diamond wire-cut...

Embodiment 3

[0032] Embodiment 3 (additive group is arranged)

[0033] This embodiment adopts the following steps:

[0034] a) Preparation of additives: under stirring, 1.0g xanthan gum, 1.0g tannic acid and 0.2g silicon-based surfactants are dissolved in 97.8 g deionized water (that is: in the prepared additives, the The weight content of water-soluble xanthan gum is 1%, the weight content of the tannic acid is 1%, and the weight content of silicon-based surfactant is 0.2%)

[0035] b) Preparation of acidic texturing solution: under stirring, mix 2 L of hydrofluoric acid with a concentration of 49%, 6 L of nitric acid with a concentration of 65-68% and 3 L of deionized water, and then add 165 ml of the above-mentioned additives, stir well

[0036] c) Texturing: immerse the diamond wire-cut polysilicon wafer in the above acid texturing solution for texturing, the texturing temperature is 8-10°C, and the texturing time is 70s.

[0037] d) The surface reflectance of the diamond wire cut...

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Abstract

The invention relates to an acid-texturing additive specially used for diamond wire cutting polycrystalline silicon wafers. The additive comprises the following components: xanthan gum, tannic acid, silicon-based surfactant and deionized water in the balance; wherein, xanthan gum The weight content of tannic acid is 0.2-3%; the weight content of tannic acid is 0.2-3%; the weight content of silicon-based surfactant is 0.05-0.2%; the balance is deionized water. After using the additive in the present invention to acid texture the diamond wire cut polysilicon wafer, the textured surface of the silicon wafer has good uniformity, and the reflectivity is 5-7% lower than that of the conventional diamond wire polysilicon wafer textured without additives. The additive is non-toxic, easy to implement, good in stability and has good practical application value.

Description

technical field [0001] The invention relates to an acid-texturing additive specially used for diamond wire cutting polycrystalline silicon wafers and a method for using the same, belonging to the technical field of chemical reagents. Background technique [0002] At present, the cutting of polycrystalline silicon wafers used in the photovoltaic industry mainly adopts the mortar wire cutting technology, but this technology has problems such as low efficiency, high processing cost and large emission pollution. In contrast, diamond wire slicing technology has attracted more and more attention due to its advantages of high cutting efficiency, low processing cost and less environmental pollution, and has gradually become the mainstream and future development direction of polysilicon slicing technology. [0003] Since the principle of diamond wire cutting is different from that of mortar wire cutting, there are great differences in the surface morphology of silicon wafers obtained...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/06
CPCC30B33/10C30B29/06
Inventor 陈国涛夏庆锋郑庆刚
Owner 宁波道乐新材料科技有限公司
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