Unlock instant, AI-driven research and patent intelligence for your innovation.

Photoresist edge removal method and photoresist edge removal machine in ntd process

A process and photoresist technology, which is applied in the field of photoresist edge removal method and photoresist edge removal machine, can solve the problems that the quality of photoresist edge removal needs to be improved, and achieve improved accuracy and poor uniformity, good uniformity, and high precision Effect

Active Publication Date: 2020-11-27
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the quality of photoresist defringing in negative tone development technology (NTD, Negative tone Development) needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoresist edge removal method and photoresist edge removal machine in ntd process
  • Photoresist edge removal method and photoresist edge removal machine in ntd process
  • Photoresist edge removal method and photoresist edge removal machine in ntd process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] According to the background art, the quality of photoresist defringing in the NTD process of the prior art needs to be improved.

[0037] For positive tone resist (positive tone resist), in the traditional positive tone resist development technology, the exposed area is developed and removed, and the non-exposed area is retained; while in the negative tone resist development technology, the exposed area is retained, and the non-exposed area is retained. The exposed areas are removed by development. However, the current wafer edge exposure method is to pre-expose the wafer edge area before exposure, and then complete the edge washing action in the development process at the same time.

[0038]Since the exposed area in NTD technology is reserved, the current wafer edge exposure method is not suitable for edge removal of photoresist in NTD technology. The photoresist edge removal method used in NTD technology is: before the exposure process, the traditional EBR method is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a photoresist edge removal process in a negative tone develop (NTD) process and a photoresist edge removal machine. The photoresist edge removal process comprises the steps ofproviding a wafer, wherein a photoresist film is coated on the wafer; exposing the photoresist film at an edge of the wafer; and developing the photoresist film after being exposed by employing a developing agent in a positive modulation photoresist developing process, and removing the photoresist film at the edge of the wafer. By the photoresist edge removal process, the accuracy of photoresistedge removal in the NTD process is improved, and the uniformity of the edge removal effect in the NTD process is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a photoresist edge removal method and a photoresist edge removal machine in an NTD process. Background technique [0002] With the development of integrated circuits, the density of transistors increases and the critical dimensions shrink. Defects generated during the photolithography process have an important impact on the yield and quality of devices. The cleanliness and definition of wafer boundaries begin to become Particularly important. During the photolithography process, the photoresist is spin-coated on the wafer surface, and there are often accumulations of photoresist on the upper and lower surfaces near the wafer boundary; during the subsequent etching or ion implantation process, these accumulations are deposited on the wafer The photoresist at the border is likely to collide with the wafer robotic handling arm, causing particle contamination to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
CPCG03F7/2028
Inventor 叶蕾胡华勇
Owner SEMICON MFG INT (SHANGHAI) CORP