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Method and structure used for preventing peripheral circuit from being damaged
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A peripheral circuit, dry etching technology, used in circuits, electrical components, electrical solid devices, etc., can solve problems such as intrusion, circuit design and process uncertainty, affecting the performance of peripheral circuit devices, and achieve the effect of suppressing damage
Active Publication Date: 2018-04-20
YANGTZE MEMORY TECH CO LTD
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However, this method cannot completely suppress the damage of hydrogen ions and oxygen ions to peripheral circuit devices, such as figure 2 As shown, at the junction of the peripheral circuit and the memory array, hydrogen ions and oxygen ions are easy to invade from the sidewall of siliconnitride, thereby affecting the performance of peripheral circuit devices; and the degree of influence is similar to that of hydrogen ions and The concentration of oxygen ions, temperature, and the size of the peripheral circuit are related to the size of the buffer area (Dummy Area) of the memory array, so it also brings great uncertainty to the circuit design and process development
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Embodiment 1
[0032] According to an embodiment of the present invention, a method for preventing damage to peripheral circuits is provided, such as image 3 shown, including:
[0033] Provide a substrate on which peripheral circuits have been formed;
[0034] forming a first protection layer on the peripheral circuit, and forming an isolation layer covering the first protection layer and part of the upper surface of the substrate;
[0035] removing part of the isolation layer to expose part of the upper surface of the substrate;
[0036] forming a second protective layer on the remaining isolation layer and the exposed portion of the upper surface of the substrate;
[0037] Etching the second protection layer to form protection spacers.
[0038] According to the embodiment of the present invention, the peripheral circuit includes: Deep N Well (Deep N Well, DNW for short), High-Voltage P Well (High-Voltage P Well, HVPW for short), Low-Voltage P Well (Low-Voltage P Well, LVPW for short),...
Embodiment 2
[0048] According to an embodiment of the present invention, a structure for preventing damage to peripheral circuits is provided, including:
[0049] Substrates on which peripheral circuits have been formed;
[0050] a first protective layer formed on the peripheral circuit, and an isolation layer formed on the first protective layer;
[0051] And the protection side wall formed on the side wall of the isolation layer, the protection side wall is connected with the first protection layer.
[0052] Wherein, the first protection layer is siliconnitride; the isolation layer is silicon dioxide.
[0053]Further, in this embodiment, the isolation layer contains inclined sidewalls;
[0054] Correspondingly, the protective sidewall is specifically: silicon nitride formed on the inclined sidewall of the isolation layer.
[0055] According to an embodiment of the present invention, the thickness of the protective spacer is between 400 angstroms and 600 angstroms.
[0056] In the pr...
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Abstract
The invention discloses a method and a structure used for preventing a peripheral circuit from being damaged and belongs to the semiconductor technology field. The method comprises the following stepsof providing a substrate where the peripheral circuit is formed; forming a first protection layer on the peripheral circuit and forming an isolation layer on the first protection layer; forming a second protection layer covering the isolation layer and parts of an upper surface of the substrate; and etching the second protection layer and forming a protection side wall. In the invention, based onan existing method of preventing damages of hydrogen ions and oxygen ions on a peripheral circuit device, which means that the first protection layer is formed on the peripheral circuit, the protection side wall is further formed on an isolation layer side wall and is connected to the first protection layer so that damages of the hydrogen ions and the oxygen ions on the peripheral circuit deviceare effectively restrained and the peripheral circuit device is protected.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method and structure for preventing peripheral circuits from being damaged. Background technique [0002] With the rapid development of integrated circuits and the continuous improvement of people's demand for storage capacity, three-dimensional memory has entered people's lives. The three-dimensional memory is mainly composed of a peripheral circuit (Periphery) and a storage array (Core). The formation process is usually to first manufacture the peripheral circuit, then the storage array, and finally the contact hole and the back-end wiring. However, in the manufacturing process of the storage array, due to the application of a large amount of ammonia (NH3), oxygen (O 2 ), silane (CH 4 ) and other gases, under the action of high temperature, a large amount of hydrogen ions (H + ) and oxygen ions (O 2- ), and the hydrogen ions and oxygen ions generated will have a se...
Claims
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Application Information
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