Uncooled infrared light detector and its preparation method
A technology of infrared light and detectors, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as complex production process, inability to popularize civilian use, and low tolerance
Active Publication Date: 2019-10-11
SHENZHEN INST OF ADVANCED TECH
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Problems solved by technology
However, due to its complex production process, low defect tolerance, and high price, it cannot be popularized for civilian use.
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[0030] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0031] Figure 1A to Figure 1F A flow chart of a method for preparing an uncooled infrared photodetector according to an embodiment of the present invention is shown, which includes the following steps:
[0032] Step 1: Refer to Figure 1A , providing a substrate 10;
[0033] Specifically, the substrate 10 can be a rigid substrate or a flexible substrate, wherein the rigid substrate can be a substrate made of glass, ceramics, quartz, and metal with poor conductivity, and the flexible substrate can be a polymer substrate, PI ( Polyimide), PET (polyethylene terephthalate), PEN (polyethylene naph...
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Abstract
The invention discloses a preparation method of a non-refrigerating type infrared light detector. The preparation method is characterized by comprising the steps of providing a substrate; manufacturing and forming a first electrode layer on the substrate; manufacturing and forming an absorption layer on the first electrode layer; manufacturing and forming a buffer layer on the absorption layer; manufacturing and forming a transparent electrode layer on the buffer layer; manufacturing and forming a second electrode layer on the transparent electrode layer, wherein the absorption layer adopts anIB-IIB-IVA-VIA doped P type material; and the buffer layer adopts an N type semiconductor material. The preparation method of the non-refrigerating type infrared light detector disclosed in the embodiment is simple in process, relatively simple in needed equipment, low in manufacturing cost, capable of realizing large-area production and realizing civilian use; and in addition, by adopting the IB-IIB-IVA-VIA doped P type material to manufacture the absorption layer, infrared absorption wavelength can be expanded.
Description
technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an uncooled infrared photodetector and a preparation method thereof. Background technique [0002] Infrared light is an electromagnetic wave that cannot be directly observed by the human eye and has a wavelength greater than 760 nanometers, which is between visible light and microwaves. To convert this infrared light into a detectable physical quantity, the usual practice is to convert it into a quantitative electrical signal. [0003] Short-wave infrared detector is an important technology of modern national defense and military. It is mainly convenient for soldiers to observe at night and in smog. Short-wave infrared technology plays an important role in resource monitoring, environmental monitoring, night vision imaging, medical diagnosis and other fields. At present, the widely used infrared detector technology includes cooling and non-cooling. Among them, the coolin...
Claims
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IPC IPC(8): H01L31/18H01L31/101
CPCH01L31/101H01L31/18Y02P70/50
Inventor 单成伟冯叶杨春雷
Owner SHENZHEN INST OF ADVANCED TECH