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A Method for Precisely Locating the Leakage Point of Interdigitated Gate Goi Structure

A positioning method, interdigitated technology, applied in the direction of measuring electricity, measuring electrical variables, instruments, etc., can solve problems such as positioning failure

Active Publication Date: 2020-04-14
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These very narrow interdigitated structures make it almost impossible to avoid the cut gate oxide layer structure being connected to the S / D CT when positioning with the traditional cutting method, resulting in uniformity of the gate oxide layer structure after cutting. Show the same contrast and make the positioning fail

Method used

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  • A Method for Precisely Locating the Leakage Point of Interdigitated Gate Goi Structure
  • A Method for Precisely Locating the Leakage Point of Interdigitated Gate Goi Structure
  • A Method for Precisely Locating the Leakage Point of Interdigitated Gate Goi Structure

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Embodiment Construction

[0017] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0018] image 3 It is shown by way of example that for a GOI structure with interdigitated gates, the problem of finally locating the failure site of the gate oxide layer by conventional FIB step-by-step dicing is shown. Such as image 3 As shown in Figure 31, the voltage contrast (VC) analysis shows a dark color, that is, there is no failure point in the gate oxide layer at the two interdigitated gate positions. And when the tra...

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Abstract

The invention provides a method for positioning failure points of a finger-shaped grid GOI (gate oxide integrity) structure. The method includes providing an integrated circuit chip sample; strippingan integrated circuit layer by layer until source / drain contact tops are exposed; etching to remove electricity-conducting materials in source / drain contact; according to a voltage contrast analysis method and a method for cutting focused ion beams (FIB), positioning the failure points of a grid oxidation layer step by step. The method has the advantages that through removal of the electricity-conducting metal in the source / drain contact, interference of the source / drain contact (S / D CT) on the voltage contrast during FIB cutting is avoided effectively, so that accurate positioning of the electric leakage points (the failure points) of the grid oxidation layer is realized, and success rate of reliability failure analysis of the grid oxidation layer is increased.

Description

technical field [0001] The invention relates to a method for failure analysis of an integrated circuit, in particular to a method for precise positioning of a leakage point (failure point) of an interdigitated (finger) gate GOI structure. Background technique [0002] In the production process of semiconductor integrated circuits, the failure analysis (FailureAnalysis, FA) of the devices on it can find and correct defects in design and production, which plays a role in improving production efficiency and improving the reliability and stability of the manufacturing process. very important role. In failure analysis, the precise location of the failure location is very important, and it is one of the methods commonly used in failure analysis to locate the failure point by voltage contrast (VC) observation. The principle of voltage contrast observation is to distinguish abnormal points based on the difference under electron beam irradiation. For example, the bright voltage cont...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCG01R31/2853G01R31/2855G01R31/2856G01R31/2898
Inventor 杜晓琼仝金雨李桂花蔚倩倩李辉
Owner YANGTZE MEMORY TECH CO LTD