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Terahertz detector structure

A terahertz detector and electrode technology, applied in the field of terahertz detector structure, can solve the problems of difficult preparation process and complex structure, and achieve the effects of increasing noise equivalent power and reducing the influence of radiation

Active Publication Date: 2018-05-04
四川省派瑞克斯光电科技有限公司 +1
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  • Application Information

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Problems solved by technology

Terahertz radiation is a weak signal and is easily affected by Beijing radiation. Currently, terahertz detectors generally adopt a separate method of optical filters and detectors to reduce the influence of background radiation. This kind of discrete method has complex structures and difficult manufacturing processes. big disadvantage

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  • Terahertz detector structure

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Embodiment Construction

[0013] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0014] Such as figure 1 It is a terahertz detector structure according to an embodiment of the present invention, including: a substrate 1, a crystal layer 2, an undoped InP buffer layer 4, an InGaAs channel layer 5, an InAlAs barrier layer 6 and GaAs contacts stacked sequentially from bottom to top Layer 7; a two-dimensional electron gas 10 is formed between the InGaAs channel layer 5 and the InAlAs barrier layer 6;

[0015] An electrode...

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Abstract

The invention provides a terahertz detector structure. The terahertz detector structure comprises a substrate, a crystal layer, a non-doped InP buffer layer, an InGaAs channel layer / InAlAs barrier layer and a GaAs contact layer which are sequentially stacked, wherein two-dimensional electron gas is formed between the InGaAs channel layer and the InAlAs barrier layer. By the arrangement, the terahertz detector structure has the advantages that the problems that an existing separate design of an optical fiber and a detector is complex in structure and high in production process difficulty, the influence of background radiation is lowered, and noise equivalent power is increased.

Description

Technical field [0001] The invention relates to a detector structure, in particular to a terahertz detector structure. Background technique [0002] At present, the methods for detecting terahertz radiation mainly include thermal radiation detection, Fourier transform spectroscopy, time domain spectroscopy, and heterodyne detection. Among them, detectors based on semiconductor materials are narrow-band detectors with fast response speed, The advantages of mature technology, small size and easy integration. Terahertz radiation is a weak signal and is easily affected by Beijing radiation. Current terahertz detectors generally use separate filters and detectors to reduce the influence of background radiation. This kind of discrete has a complex structure and difficult preparation processes. Big disadvantage. Summary of the invention [0003] In order to achieve the above technical objectives and achieve the above technical effects, the present invention is achieved by the following...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0304H01L31/119
CPCH01L31/03046H01L31/119
Inventor 徐凤李丽娟任娇娇
Owner 四川省派瑞克斯光电科技有限公司