Terahertz detector structure
A terahertz detector and electrode technology, applied in the field of terahertz detector structure, can solve the problems of difficult preparation process and complex structure, and achieve the effects of increasing noise equivalent power and reducing the influence of radiation
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[0013] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
[0014] Such as figure 1 It is a terahertz detector structure according to an embodiment of the present invention, including: a substrate 1, a crystal layer 2, an undoped InP buffer layer 4, an InGaAs channel layer 5, an InAlAs barrier layer 6 and GaAs contacts stacked sequentially from bottom to top Layer 7; a two-dimensional electron gas 10 is formed between the InGaAs channel layer 5 and the InAlAs barrier layer 6;
[0015] An electrode...
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