Combining method of composite substrate

A bonding method and technology for composite substrates, which are applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of small residual stress, inability to improve the yield of composite substrates, and hole defects in composite substrates, so as to avoid void defects. Effect

Inactive Publication Date: 2018-05-08
CRYSTALWISE TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Although the existing bonding device 100 can bond the two substrates W1, W2, compared with fusion bonding, it has the advantages of small residual stress and no additional thickness increase, but there will still be holes in the formed composite substrate. problems, so that the yield of composite substrates cannot be improved

Method used

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  • Combining method of composite substrate
  • Combining method of composite substrate

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Embodiment Construction

[0039] In order to explain the present invention more clearly, a preferred embodiment will be described in detail below in conjunction with the drawings. Please refer to figure 2 Shown is the bonding device 1 used in the method for bonding composite substrates in the first preferred embodiment of the present invention. The bonding device 1 includes a body 20, a loading chamber 22 and a clean chamber disposed in the body 20. The chamber 24, a pre-vacuum chamber 26, a conversion chamber 28 and a compression chamber 30. The joining method of this embodiment includes image 3 The following steps are shown:

[0040] At least one first substrate W1 and at least one second substrate W2 are placed into the loading chamber 22 from the outside of the body 20. The first substrate W1 and the second substrate W2 are made of different materials. The first substrate W1 and the second substrate W2 are made of different materials. One of the substrates W2 is a support substrate, and the other i...

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Abstract

A combining method of a composite substrate comprises the following steps of placing a first substrate and a second substrate in the body of a combining device; cleaning a first combining surface of the first substrate and a second combining surface of the second substrate in the body; conveying the first substrate and the second substrate to a converting chamber, overturning the second substratein the converting chamber; conveying the first substrate and the overturned second substrate to a pressing chamber so that the first combining surface faces the second combining surface; performing activating processing on the first combining surface and the second combining surface; and making the first substrate and the second substrate get close to each other so that the first combining surfaceand the second combining surface contact each other for forming the composite substrate. Therefore, in-line cleaning is performed in the body, thereby reducing adhesion of pollution particles on thefirst combining surface and the second combining surface and preventing a cavity defect of the composite substrate.

Description

Technical field [0001] The present invention relates to the manufacture of composite substrates; in particular, it refers to a directly bonded composite substrate. Background technique [0002] The composite substrate is formed by joining two independent substrates. At present, the common joining methods are mainly divided into two types. One is the direct bonding method, and the other is through the intermediary layer (such as gluing, metal medium) Joining method. [0003] The direct bonding method includes fusion bonding and room temperature bonding. The fusion bonding is to grow a sacrificial oxide layer on the bonding surface of two substrates, and then bombard the sacrificial oxide layer with plasma to make The surface is activated, and then the surface of the activated sacrificial oxide layer is contacted with water to form OH bonds on the surface, and then the sacrificial oxide layers of the two substrates are butted, and finally the OH bonds are removed by annealing to for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/67
CPCH01L21/02057H01L21/6704H01L21/67155
Inventor 王兴民李瑞评张延瑜刘国华
Owner CRYSTALWISE TECH
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