Combining method of composite substrate

A bonding method and technology for composite substrates, which are applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of small residual stress, inability to improve the yield of composite substrates, and hole defects in composite substrates, so as to avoid void defects. Effect
CN108010831AInactive Publication Date: 2018-05-08CRYSTALWISE TECH
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
CRYSTALWISE TECH
Publication Date
2018-05-08
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

A combining method of a composite substrate comprises the following steps of placing a first substrate and a second substrate in the body of a combining device; cleaning a first combining surface of the first substrate and a second combining surface of the second substrate in the body; conveying the first substrate and the second substrate to a converting chamber, overturning the second substratein the converting chamber; conveying the first substrate and the overturned second substrate to a pressing chamber so that the first combining surface faces the second combining surface; performing activating processing on the first combining surface and the second combining surface; and making the first substrate and the second substrate get close to each other so that the first combining surfaceand the second combining surface contact each other for forming the composite substrate. Therefore, in-line cleaning is performed in the body, thereby reducing adhesion of pollution particles on thefirst combining surface and the second combining surface and preventing a cavity defect of the composite substrate.
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Description

Technical field

[0001] The present invention relates to the manufacture of composite substrates; in particular, it refers to a directly bonded composite substrate. Background technique

[0002] The composite substrate is formed by joining two independent substrates. At present, the common joining methods are mainly divided into two types. One is the direct bonding method, and the other is through the intermediary layer (such as gluing, metal medium) Joining method.

[0003] The direct bonding method includes fusion bonding and room temperature bonding. The fusion bonding is to grow a sacrificial oxide layer on the bonding surface of two substrates, and then bombard the sacrificial oxide layer with plasma to make The surface is activated, and then the surface of the activated sacrificial oxide layer is contacted with water to form OH bonds on the surface, and then the sacrificial oxide layers of the two substrates are butted, and finally the OH bonds are removed by annealing to for...

Claims

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