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Method for manufacturing a diode and the resulting diode

A manufacturing method and diode technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of product surface roughness, surface corrosion, etc., achieve high-performance pickling, save energy, improve high-temperature reverse bias and The effect of two reliability indicators of high temperature storage

Active Publication Date: 2019-09-03
淄博绿能芯创电子科技有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

[0008] In the current conventional formula of mixed acid, the surface of some products is rough after pickling, and it will cause a considerable proportion of surface corrosion pits

Method used

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Embodiment Construction

[0051]The technical content of the present invention is described below through specific specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0052] A method of manufacturing a diode, comprising the steps of:

[0053] Step 1: Preparation of Diode Die

[0054] 1.1. Pre-cut in the thickness direction of the silicon wafer to form incompletely cut square diode crystal grains. The cutting depth of the silicon wafer is 3 / 5 to 4 / 5 of the total thickness of the silicon wafer.

[0055] 1.2. Place the pre-cut silicon wafer in the thickness direction with the N side up on...

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Abstract

The invention discloses a manufacturing method of a diode and the diode fabricated by the manufacturing method. The manufacturing method comprises the steps of diode grain crystal fabrication, filling, welding, cleaning and package. Due to different thermal expansion coefficients and deformation of a grain crystal and a welding sheet, the grain crystal can be automatically stretched after weldingwithout grain crystal alignment in advance before welding, the pore area is greatly reduced, and the welding quality is improved. A mixed acid prepared from hydrofluoric acid, acetic acid, sulfuric acid and nitric acid according to a volume ratio being 8.8:13:5.6:9.2 is high in grain crystal electrical conductivity after pickling.

Description

technical field [0001] The invention belongs to the field of high-voltage silicon stacks, and in particular relates to a method for manufacturing a diode and the diode produced therefrom. Background technique [0002] The current general method of grain manufacturing is to use the process of welding and stacking the whole silicon wafer and then cutting it. The welding fixture is bulky and complicated, and due to the deformation caused by the diffusion process of the whole silicon wafer before, the distribution of the large silicon wafer is not uniform after high temperature melting. , leading to a high breakage rate during the cutting process, and the small units after cutting have to be refilled with welding leads. The second welding causes secondary damage to the grains, and the more welding times, the more serious the damage. The above process is not only complicated in process and complex in equipment, but also high in cost and low in yield (about 80%). [0003] General...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L29/861
Inventor 刘云燕李广德王仁东修俊山付圣贵谢德怀魏芹芹孙艳
Owner 淄博绿能芯创电子科技有限公司
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