Method and system for measuring thickness of non-metallic materials using terahertz waves
A technology of non-metallic materials and terahertz waves, applied in the field of thickness measurement, can solve problems such as inability to measure materials and measurement errors, and achieve the effects of rigorous and accurate material measurement, simple system structure, and guaranteed accuracy
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Embodiment 1
[0052] In this embodiment, polyethylene pipes (about 3 cm in thickness) with unknown refractive index and thickness are measured, and the specific method is as follows:
[0053] 1. First measurement
[0054] Make the terahertz wave perpendicular to the emission distance of 30cm (θ i =0°) incident on the surface of the polyethylene pipe, the terahertz wave is reflected by the surface of the polyethylene pipe (i.e., the outer wall of the pipe) to form the first reflected signal, and at the same time, the terahertz wave passes through the surface of the polyethylene pipe and is reflected on the bottom surface of the polyethylene pipe (that is, the inner wall of the pipe) reflection forms the second reflection signal.
[0055] Receive the first reflected signal and the second reflected signal above, and obtain the receiving time difference ΔT between the first reflected signal and the second reflected signal 1 .
[0056] 2. The second measurement
[0057] Make the same teraher...
Embodiment 2
[0068] In this embodiment, both the refractive index and the thickness are unknown to the glass fiber board (the thickness is about 2.5mm) and the specific method is as follows:
[0069] 1. First measurement
[0070] Make the terahertz wave perpendicular to the launch distance of 20cm (θ i =0°) incident on the surface of the above-mentioned glass fiber plate, the terahertz wave is reflected by the surface of the glass fiber plate to form a first reflection signal, and at the same time, the terahertz wave passes through the surface of the glass fiber plate and is reflected on its bottom surface to form a second reflection signal.
[0071] Receive the first reflected signal and the second reflected signal above, and obtain the receiving time difference ΔT between the first reflected signal and the second reflected signal 1 .
[0072] 2. The second measurement
[0073] Make the same terahertz wave with a launch distance of 20cm and an incident angle of 30°(θ i =30°) incident ...
Embodiment 3
[0084] In this embodiment, a silicon wafer (about 0.5mm in thickness) whose refractive index and thickness are unknown is measured, and the specific method is as follows:
[0085] 1. First measurement
[0086] Make the terahertz wave perpendicular to the launch distance of 10cm (θ i =0°) incident on the surface of the above-mentioned silicon wafer, the terahertz wave is reflected by the surface of the silicon wafer to form a first reflection signal, and at the same time, the terahertz wave passes through the surface of the silicon wafer and is reflected on the bottom surface to form a second reflection signal.
[0087] Receive the first reflected signal and the second reflected signal above, and obtain the receiving time difference ΔT between the first reflected signal and the second reflected signal 1 .
[0088] 2. The second measurement
[0089] Let the same terahertz wave be emitted at a distance of 10cm and an incident angle of 55°(θ i =55°) incident on the same positi...
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Abstract
Description
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