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Rapid recovery Pin diode and fabrication method thereof

A manufacturing method and diode technology, which are applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor performance of fast recovery Pin diodes, and achieve the effects of improving reliability, reducing product leakage, and reducing damage

Active Publication Date: 2018-05-18
超仪科技股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the fast recovery Pin diodes formed by existing fabrication methods may have poor performance

Method used

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  • Rapid recovery Pin diode and fabrication method thereof
  • Rapid recovery Pin diode and fabrication method thereof
  • Rapid recovery Pin diode and fabrication method thereof

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Embodiment Construction

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] In order to solve the technical problem of increasing device voltage drop and reducing device performance due to the unsatisfactory defect concentration distribution of the fast recovery Pin diode formed by the existing method, the invention provides a method for manufacturing the fast recovery Pin diode. see Figure 1-Figure 10 , the figure 1 It is a flow chart of the manufacturing method of the fast recovery Pin diode of the present invention, Figure 2-Figure 10 yes figure 1 Schematic diagram of the stru...

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Abstract

The invention provides a rapid recovery Pin diode and a fabrication method thereof. The rapid recovery Pin diode comprises an N-type substrate, an N-type epitaxial layer, two P-type injection regions,P-type high-doping regions and a P-type low-doping injection region, wherein the N-type epitaxial layer is formed on the N-type substrate, the two P-type injection regions are formed on a surface, far away from the N-type substrate, of the N-type epitaxial layer at intervals, each P-type high-doping regions are formed on a surface of each P-type injection region, and the P-type low-doping injection region is formed on the N-type epitaxial layer, the P-type injection region and the P-type high-doping region.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a fast recovery Pin diode and a manufacturing method thereof. 【Background technique】 [0002] Power diodes are key components of circuit systems, and are widely used in high-frequency inverters, digital products, generators, televisions and other civilian products, as well as satellite receivers, missiles and aircraft and other advanced weapon control systems and instrumentation equipment. Military occasions. Power diodes are expanding in two important directions: (1) to tens of millions or even tens of thousands of amperes, which can be applied to high-temperature arc wind tunnels, resistance welding machines, etc.; (2) reverse recovery time is getting shorter and shorter, showing Developing in the direction of ultra-fast, ultra-soft, and ultra-durable, it is not only used in rectification occasions, but also has different functions in various switc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/868H01L21/329
CPCH01L29/0634H01L29/6609H01L29/868
Inventor 不公告发明人
Owner 超仪科技股份有限公司