Fast recovery diode and its manufacturing method

Abstract

The invention provides a fast-recovery diode and a manufacturing method thereof. The fast-recovery diode comprises an N type epitaxial layer, a fast-recovery diode front surface structure formed on the first surface of the N type epitaxial layer, a first trench and a second trench formed in the second surface, far from the fast-recovery diode front surface structure, of the N type epitaxial layer,a platinum material layer formed on the surfaces of the first and second trenches, and a metal layer formed on the surface of the N type epitaxial layer and the surface of the platinum material layer, wherein the metal layer is used as a back surface electrode.

Description

【Technical field】 [0001] The invention relates to the technical field of manufacturing semiconductor devices, in particular to a fast recovery diode and a manufacturing method thereof. 【Background technique】 [0002] Whether the main circuit in the modern power electronic circuit is a thyristor with commutation shutdown or a new type of power electronic device with self-shutdown capability, such as GTO, MOSFET, IGBT, etc., it needs a power fast recovery diode connected in parallel. , to pass the reactive current in the load, reduce the charging time of the main switching device capacitor, and at the same time suppress the high voltage induced by the parasitic inductance when the load current reverses instantaneously. In recent years, with the continuous improvement of power semiconductor device manufacturing technology, the design and manufacture of new power semiconductor devices such as VDMOS and IGBT, the main switching devices in power electronic circuits, have made grea...

AI Technical Summary

Problems solved by technology

However, in the defect concentration distribution of the device formed by this method, since the minority carrier recombination mainly occurs in the drift region, only the platinum material in the drift region will contribute to reducing the recombination time, and the platinum material in the rest of the device will Form defects, increase device voltage drop, and degrade device performance

At the same time, during the diffusion process of platinum materials, a large amount of movable charges will also enter the device body, which will increase product leakage, increase switching losses, and affect product reliability.

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