Transient voltage suppressor and making method thereof

A technology for transient voltage suppression and manufacturing methods, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of increasing device area and manufacturing cost, and achieve small device area, low process difficulty, and protection Effects of improved characteristics and reliability

Inactive Publication Date: 2018-05-22
SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD
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Problems solved by technology

[0004] Currently commonly used transient voltage suppressors (such as trench transient voltage suppressors) generally can only achieve unidirectional protection. If bidirectional protection is required, multiple transient voltage suppressors must be connected in series or in parallel, but this will increase Large device area and manufacturing cost

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  • Transient voltage suppressor and making method thereof
  • Transient voltage suppressor and making method thereof
  • Transient voltage suppressor and making method thereof

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Embodiment Construction

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0036] see figure 1 , figure 1 is a schematic structural diagram of the transient voltage suppressor 100 of the present invention. The transient voltage suppressor 100 includes a P-type substrate, a first N-type doped layer formed on the P-type substrate, a P-type epitaxial layer formed on the first N-type doped layer, The N-type epitaxial layer formed on the P-type epitaxial layer, the second N-type doped layer formed on the N-type epitaxial layer, passing through the second N-type doped layer, the N-type epitaxia...

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Abstract

A transient voltage suppressor comprises a P-type substrate, a first N-type doping layer formed on the P-type substrate, a P-type epitaxial layer formed on the first N-type doping layer, an N-type epitaxial layer formed on the P-type epitaxial layer, a second N-type doping layer formed on the N-type epitaxial layer, a first groove and a second groove passing through the second N-type doping layer,the N-type epitaxial layer and the P-type epitaxial layer and extending to the first N-type doping layer, silicon oxide layers formed on the side walls of the first groove and the second groove, anda metal layer formed in the first groove and the second groove and on the second N-type doping layer, wherein the metal layer comprises a first part formed in the first groove and connected with the first N-type doping layer, a second part formed in the second groove and connected with the first N-type doping layer and a third part adjacent to the second N-type doping layer between the first groove and the second groove.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a transient voltage suppressor and a manufacturing method thereof. 【Background technique】 [0002] Transient Voltage Suppressor (TVS) is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, and leakage Due to the advantages of small current and high reliability, it has been widely used in voltage transient and surge protection. The low-capacitance transient voltage suppressor is suitable for the protection of high-frequency circuits, because it can reduce the interference of parasitic capacitance to the circuit and reduce the attenuation of high-frequency circuit signals. [0003] Electrostatic discharge (ESD), along with other random voltage transients in the form of voltage surges, are commonly found in a va...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L21/82
CPCH01L27/0255H01L21/82H01L27/0296
Inventor 不公告发明人
Owner SHENZHEN JINGTE INTELLIGENT MFG TECH CO LTD
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