Graphene infrared sensor based on photonic crystal photoresponse enhancement technology and preparation method thereof

An infrared sensor and photonic crystal technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of inability to effectively distinguish infrared light, poor sensitivity and response speed, and low cost, and achieve wide-band photoresponse rate and preparation process Simple, low-cost effect

Inactive Publication Date: 2018-05-25
HONG KONG PRODUCTIVITY COUNCIL
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Problems solved by technology

Its cost is lower, but the sensitivity and response speed are not as good as cooled narrowband semiconductors
Moreover, whether it is a cooled or unc

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  • Graphene infrared sensor based on photonic crystal photoresponse enhancement technology and preparation method thereof
  • Graphene infrared sensor based on photonic crystal photoresponse enhancement technology and preparation method thereof
  • Graphene infrared sensor based on photonic crystal photoresponse enhancement technology and preparation method thereof

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Embodiment Construction

[0041] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the examples given are not intended to limit the present invention.

[0042] The object of the present invention is to provide a graphene infrared sensor based on photonic crystal photoresponse enhancement technology, which is prepared by a photonic response amplification method for specific wavelength infrared rays, and by designing photonic crystal structure and size to produce higher sensitivity photoelectric sensor. For infrared rays of a specific wavelength, by designing the period of the photonic crystal and the position and size of the defect, the photonic crystal can focus the incident infrared rays on the graphene surface to achieve the purpose of enhancing the photoresponsivity. After graphene absorbs infrared energy, photoinduced carriers...

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Abstract

The invention discloses a graphene infrared sensor based on a photonic crystal photoresponse enhancement technology and a preparation method thereof. The graphene infrared sensor comprises a silicon wafer. An insulation layer is set on partial silicon wafer. An electrode layer is set on the insulation layer. When the silicon wafer with a silicon dioxide layer is selected, the electrode layer is directly formed on the partial silicon wafer. A photosensitive nano-graphene material layer is set on the partial electrode layer and the partial silicon wafer. Photonic crystal parts prepared through photoetching are set on all the rest electrode layer, the photosensitive nano-graphene material layer and all the rest silicon wafer. According to the graphene infrared sensor, a new-type nano-graphenematerial is taken as a photosensitive material and photonic crystals are added to gather infrared rays of specific wavelengths, so a photoresponse rate is improved, a preparation process is simple, the cost is low, and the graphene infrared sensor is a quantum sensor without refrigeration.

Description

technical field [0001] The invention belongs to the field of photoelectric sensors, in particular to a graphene infrared sensor based on photonic crystal photoresponse enhancement technology and a preparation method thereof. Background technique [0002] Infrared detection technology has an extremely wide range of applications, and with the continuous development and popularization of infrared detection technology, new applications are constantly being developed. At present, it mainly focuses on four commercial uses: thermal imaging cameras, automotive active safety technology, and infrared imaging and monitoring in smartphones. It is estimated that by the end of 2017, the market share of commercial imaging will surpass that of military use, accounting for more than 50% of the market, reaching US$3 billion. Infrared thermal imager applications are concentrated in electrical equipment testing, mechanical and electrical equipment testing, building testing and product quality ...

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Application Information

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IPC IPC(8): H01L31/101H01L31/028H01L31/0232
CPCH01L31/0232H01L31/028H01L31/101
Inventor 赖伟超卢伟贤唐鑫潘志豪郑颕怡
Owner HONG KONG PRODUCTIVITY COUNCIL
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