Transverse p-n-n microcavity-structured Ge light-emitting device and preparation method thereof

Abstract

The invention discloses a transverse p-n-n microcavity-structured Ge light-emitting device. The light-emitting device comprises an active layer n-Ge layer; a Si / SiO<2> structure is on the lower surface of the n-Ge layer; the n-Ge layer and the Si / SiO<2> structure form a highly-doped n type GOI substrate; a bottom distributed Bragg reflection mirror is arranged at the bottom; a p-GeSi region and ann-GeSi region are arranged on the two sides of the upper surface of the n-Ge layer, and an active region is in the middle; the n-Ge layer is exposed at the bottom of the active region; a top distributed Bragg reflection mirror is arranged in the active region; electrodes of low-resistance conductive materials are arranged on the p-GeSi region and the n-GeSi region; and a silicon oxide passivationlayer is arranged on the surface of the light emitting device. A GeSi layer with high germanium component is arranged on the highly-doped n type GOI substrate in an epitaxial manner, and the Ge lightemitting device with the transverse p-n-n structure is realized, wherein the Ge component is 0.85, and an effective potential layer can be formed between GeSi and Ge, so that an effective limiting effect on electrons and holes can be played, so that Ge band light emitting efficiency can be further reinforced directly; and the method has the advantages of simple preparation process, compatibilitywith a mature silicon CMOS process, high operability, excellent light emitting performance and the like, and has extremely high application value.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a Ge light-emitting device with a lateral p-n-n microcavity structure and a preparation method thereof. Background technique [0002] Silicon-based light-emitting devices are one of the important components to realize silicon-based optoelectronic integrated circuits. At present, there are two main methods for preparing silicon-based light-emitting devices, one is the preparation of Si-based III-V hybrid integrated lasers, and the other is the preparation of new Si-based group IV light-emitting devices. The main research directions for Si-based III-V hybrid integrated lasers can be summarized into three types: First, the mature III-V semiconductor laser devices are packaged on Si-based chips by flip-chip welding technology. Although this method can ensure that the laser has Good performance, but the technical level is high, and the current technical level is not enough for mass prod...

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Problems solved by technology

The main research directions for Si-based III-V hybrid integrated lasers can be summarized into three types: First, the mature III-V semiconductor laser devices are packaged on Si-based chips by flip-chip welding technology. Although this method can ensure that the laser has Good performance, but the technical level is high, and the current technical level is not enough for mass production

Second, the mature III-V semiconductor laser device is pasted on the Si-based chip by bonding technology. This method has poor thermal stability and is not compatible with the silicon CMOS process, and the production cost is too high.

Third, by designing a suitable active layer and using the method of heteroepitaxy, directly epitaxial III-V group direct bandgap luminescent materials on Si substrates, due to the lattice mismatch between Si and III-V materials, epitaxy is difficult Relatively large, and the performance of the laser device prepared by this method needs to be improved

Since the lattice mismatch between Si and Ge is as high as 4.2%, when epitaxial Ge material on Si substrate, too many defects are inevitably introduced at the interface between Si and Ge, which not only increases the non-radiative recombination center, but also reduces the leakage current of the device. Increased; In addition, the direction of the light output of this vertical structure device is consistent with the direction of the current, and the light generated by it will also be absorbed by the metal electrode when it passes near the metal electrode, which further reduces the direct band luminous efficiency of Ge

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