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Preparation method of low-cost sulfur palladium alloy resisting composite film

The technology of a palladium alloy membrane and a composite membrane is applied in the field of preparation of a sulfur-resistant palladium alloy composite membrane, which can solve the problems of pinhole defects, poisoning of the Pd composite membrane, decreased hydrogen permeation selectivity, etc., and achieves enhanced stability, low cost, The effect of high hydrogen permeability and selectivity

Active Publication Date: 2018-06-01
新疆裕隆丰源气体有限公司
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  • Description
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AI Technical Summary

Problems solved by technology

h 2 S and other sulfur-containing compounds will irreversibly chemisorb on the surface of the Pd film and form PdSX compounds, which will lead to poisoning of the Pd composite film, and pinhole defects on the surface of the Pd film will lead to a decrease in hydrogen permeation selectivity.

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  • Preparation method of low-cost sulfur palladium alloy resisting composite film

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preparation example Construction

[0015] Such as figure 1 As shown, the present invention is a preparation method of a low-cost anti-sulfur-palladium alloy composite membrane. The low-cost anti-sulfur-palladium alloy composite membrane includes a palladium alloy membrane or a palladium double-alloy composite membrane on the surface of a porous support. The palladium composite membrane on the surface of the porous support adopts one-time alloying to prepare the Pd-Ag / Pd / Pd-Cu double alloy composite membrane, and the steps of the preparation method are:

[0016] (1) First, clean the surface of the support body. After activation and sensitization, put it into the silver plating solution at 323K~353K for electroless Ag plating. The thickness of the Ag film is 1~2μm. Wash thoroughly in deionized water and dry;

[0017] (2) When performing electroless Pd plating, put the support body coated with Ag film into the palladium plating solution and continue electroless Pd plating on the prepared Ag film. The thickness of...

Embodiment 1

[0029] (1) First, clean the surface of the Ti support body, and after activation and sensitization, put it into the gold plating solution at 333K for 30 minutes of electroless Ag plating. The composition of the silver plating solution is: AgNO 3 (2g / L), Na 2 .EDTA (30g / L), NH 4 OH (25%, 300ml / L), N 2 h 2 (0.1mol / L). The thickness of the plated Ag film is 1 μm, and the support body after chemical deposition is thoroughly cleaned in 373K deionized water, and dried at 323K;

[0030](2) When performing electroless Pd plating, put the support body coated with Au film into the palladium plating solution and continue electroless Pd plating on the prepared Ag film for 5h. The composition of the palladium plating solution is: SnCl 2 (1g / L), PdC 2 l (1g / L), HCl (36%), EDTA.2Na (30g / L), N 2 h 2 (0.1mol / L), NH 4 OH (25%); the thickness of the plated Pd film is 2 μm, and the support body after the chemical plating of Pd is cleaned and dried in the same way as that of the chemical p...

Embodiment 3

[0039] (1) First clean the surface of the Ti support body, after activation and sensitization, put it into the silver plating solution at 333K for electroless Ag plating for 40min, the composition of the silver plating solution is: AgNO 3 (4g / L), Na 2 .EDTA (40g / L), NH 4 OH (25%, 400ml / L), N 2 h 2 (0.4mol / L). The thickness of the plated Ag film is 1.4 μm, and the support body after chemical deposition is thoroughly cleaned in 373K deionized water, and dried at 373K;

[0040] (2) When performing electroless Pd plating, put the support body coated with Ag film into the palladium plating solution and continue electroless Pd plating on the prepared Ag film for 7h. The composition of the palladium plating solution is: SnCl 2 (3g / L), PdC 2 l (3g / L), HCl (38%), EDTA.2Na (50g / L), N 2 h 2 (0.4mol / L), NH 4 OH (28%,); the thickness of the plated Pd film is 3.0 μm, and the support body after the electroless plating of Pd is cleaned and dried by the same method as that of the elect...

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Abstract

The invention provides a preparation method of a low-cost sulfur palladium alloy resisting composite film. The low-cost sulfur palladium alloy resisting composite film is prepared from a palladium alloy film or a palladium double-alloy composite film on the surface of a porous supporting body; a palladium composite film on the surface of the porous supporting body is subjected to disposable alloying to prepare a Pd-Ag / Pd / Pd-Cu double-alloy composite film. The preparation method comprises the following steps: firstly, chemically plating Ag by adopting a continuous chemical plating method; depositing an Ag film on the surface of the porous supporting body; secondly, chemically plating Pd; depositing a Pd film on the Ag film on the surface of the porous supporting body; finally, chemically plating Cu and depositing the Cu on the Ag / Pd film on the surface of the porous supporting body; after all film plating processes are finished, putting the porous supporting body containing the Ag / Pd / Cufilm into a film assembly and carrying out alloying operation.

Description

technical field [0001] The invention relates to the preparation technology of anti-sulfur palladium alloy composite film. Background technique [0002] Hydrogen energy has attracted widespread attention due to its unique advantages such as a wide range of sources and no pollution to the environment. There are many ways to produce hydrogen, such as hydrogen production from fossil fuels, hydrogen production from water splitting, hydrogen production from biomass, and thermochemical hydrogen production. However, the current large-scale industrial use is still fossil fuel hydrogen production, and natural gas reforming technology is currently the main method for fossil fuel industrial hydrogen production. However, due to the basic characteristics of rich coal, poor oil, and little gas in my country's natural resources, the development of coal gasification hydrogen production technology is a research hotspot recently discussed by researchers. At the same time, the coal gasificati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D71/02B01D69/12B01D69/02B01D67/00
CPCB01D67/0069B01D69/02B01D69/12B01D71/022B01D2325/30
Inventor 张栋强杨平陈彦安赵静杨珊珊
Owner 新疆裕隆丰源气体有限公司
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