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The Method of Improving the OPC Accuracy of Through Hole Layer

A through-hole layer and precision technology, which is applied in the field of optical correction of microelectronic layout data, can solve the problems of simulation result changes and correction results that are difficult to reach the target, and achieve the effects of reducing accuracy, improving OPC correction accuracy, and improving OPC correction accuracy

Active Publication Date: 2020-11-24
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Claims
  • Application Information

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Problems solved by technology

Due to the interaction between vias, any movement of adjacent graphic edges may cause changes in the entire simulation result, thus making it difficult to achieve the final corrected result.

Method used

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  • The Method of Improving the OPC Accuracy of Through Hole Layer
  • The Method of Improving the OPC Accuracy of Through Hole Layer
  • The Method of Improving the OPC Accuracy of Through Hole Layer

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Embodiment Construction

[0034] In the OPC processing of the through-hole layer, due to the mutual influence between the graphics, it is difficult to achieve the ideal result in a limited iterative process. Especially in the dense via-hole graphics, there are often some correction errors on the edges of some graphics, resulting in the final process window. On the small side.

[0035] The method for improving the OPC precision of the through-hole layer starts with the traditional OPC method. After multiple iterations, there are certain rules in the dense graphic edges of the dense via-hole graphics. When there are one or two dense graphic edges, the correction of the dense graphic edges The correction amount (the deviation between the graph after OPC and the target graph) is relatively small, and when there are three dense graph edges, the correction amount of at least two dense graph edges is relatively small. Therefore, in the OPC iteration process, according to the results of the traditional OPC met...

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Abstract

The invention discloses a method for improving OPC (Optical Proximity Correction) precision of a through hole layer. The method comprises the steps of selecting intensive image sides of a square intensive through hole image, limiting correction of one or two intensive image sides, and endowing fixed correction values to the selected intensive image sides according to a model-based OPC processing method. According to the method provided by the invention, the overall OPC correction precision can be improved, and a microimage process window can be improved.

Description

technical field [0001] The invention relates to the field of optical correction of microelectronic layout data, in particular to a method for improving the precision of OPC (Optical Proximity Effect Correction) of a through-hole layer. Background technique [0002] In deep submicron integrated circuit manufacturing, model-based OPC processing has been widely used in different levels of lithography process. By establishing a photolithography model corrected by silicon wafer data, it is possible to predict the existence of pattern transfer distortion under specific lithography process conditions, and then make certain pattern compensation or correction according to the distortion simulated by the model, and make corrections Then simulate the graphics and check whether the target is reached. After a certain number of iterations, the simulation of the final graphics can be as close as possible to the target graphics. This is the existing model-based OPC processing method (herein...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/36G06F30/39
CPCG03F1/36G06F30/39
Inventor 江志兴何大权魏芳
Owner SHANGHAI HUALI MICROELECTRONICS CORP