Equipment and method for reducing defects of wafer holes

Abstract

The application relates to a machine board for electroplating a wafer. The machine board comprises a cavity, wherein an opening is formed in the surface of the cavity and used for receiving the waferso as to feed the wafer into the cavity; a metal anode is arranged in the cavity and can be filled with an electrolytic solution; the metal anode is basically perpendicular to the liquid level of theelectrolytic solution.

Description

technical field [0001] The present invention relates to a device and method for electroplating wafers, and more particularly relates to a device and method capable of reducing wafer void defects in the process of electroplating wafers. Background technique [0002] Fabrication of semiconductor devices generally requires the formation of conductive layers on semiconductor wafers. For example, conductive leads on the wafer are typically formed by electroplating (depositing) a conductive layer such as copper on the wafer and within the patterned trenches / vias. Specifically, a conductive seed layer is first deposited in the trenches and on the surface of the semiconductor substrate, for example by physical vapor deposition. An electroplating process is then used to form a conductive layer on the conductive seed layer. [0003] The electrolytic solution is in electrical contact with the surface of the wafer to be plated (the surface to be plated of the wafer is hereinafter refe...

AI Technical Summary

Problems solved by technology

Since the various grooves and through holes on the front of the wafer are facing downward, the gas in the grooves and through holes cannot be discharged in time when the wafer enters the electrolytic solution, thus making the electrolytic solution and the wafer conductive The contact effect of the seed layer is reduced, which reduces the hole filling ability during the electrochemical polishing (ECP) process, which eventually leads to void defects

Images