45results about How to "Reduce void defects" patented technology

The invention discloses aluminum foil used for a 6811 alloy automotive radiator and a preparing method thereof. The aluminum foil comprises, by weight, 0.45%-0.55% of iron, 1.05%-1.25% of manganese, 0.44%-0.58% of silicon, 0.01%-0.05% of magnesium, 0.10%-0.15% of copper and 1.4%-1.6% of zinc, the weight percentage of titanium, the weight percentage of nickel, the weight percentage of chromium and the weight percentage of zirconium are smaller than 0.045%, the content of unavoidable single impurity is smaller than 0.05%, the total content of unavoidable impurities is smaller than 0.15%, and the balance aluminum. The process is simple, energy is saved, and the yield is higher than that of hot rolling by 15%; a researched and developed product is low in cost, good in plate shape, excellent in welding performance and conducting performance, and stable in quality and performance when used by users.

The invention discloses a production method of solar-grade czochralski silicon, and relates to the technical field of czochralski silicon. The production method comprises the following eight steps of charging, melting, stabilizing the temperature, seeding, shouldering, performing equal-diameter growth and ending. According to the production method disclosed by the invention, in the seeding process, the crystal rotation and the crucible rotation are set to be 8 revolutions per minute. The production method is simple and convenient to operate, easy to realize, capable of effectively reducing crystal defects which possibly appear in a crystallization process, lowering a problem of producing black chips and black angle plates in the czochralski silicon, remarkably improving the quality of the single crystal and prolonging the service life of the single crystal, avoiding returned goods due to product quality defects and saving unnecessary fund waste for the enterprises.

The invention provides a formation method of a metal interconnection structure. The method comprises that a metal seed crystal layer is formed at the surface of a semiconductor substrate and in grooves of the semiconductor substrate, and then a shield layer is formed at the surface of the metal seed crystal layer; and the shield layer at the bottom of the grooves is removed to expose the metal seed crystal layer at the bottom of the grooves, and the shield layer which covers the sidewalls of the grooves is reserved. In the subsequent process that a metal layer is formed on the metal seed crystal layer, the metal layer cannot be formed at the sidewalls of the grooves due to that the sidewalls of the grooves are covered with the shield layer, and the metal layer can be only formed from bottom to top gradually on the metal seed crystal layer, which is exposed at the bottom of the grooves, till the grooves are filled; the defect that gaps are formed in the metal layer in the grooves due to the fact that openings of the grooves are closed too early when the grooves are not full of metal layer; and further, the performance of the metal interconnection structure formed in the grooves subsequently and the performance of a semiconductor device formed subsequently are improved.

The invention discloses a method for eliminating electroplating cavity defects on a wafer surface. Through using a current direction controllable circuit in carrying out electroplating filling to the grooves or through holes of the wafer surface, a current magnitude and direction adjustable circuit is formed; forward and reverse currents are applied to a wafer alternately so as to form an electroplating/etching sequence; in the electroplating process, the wafer surface can be electroplated; the coating film on the wafer surface can be dissociated; therefore, relatively good step coverage rate and good groove (through hole) opening are obtained; the perfect filling process is realized; and the cavity defects formed in the filling process can be reduced.

The invention provides a stirring head for welding metal and a thermoplastic polymer and a welding method, and belongs to the field of new material connection. The stirring head is characterized by a concave shaft shoulder and an inverted-tower-shaped stirring needle with a multi-stage flow blocking circular truncated cone structure of the stirring head. The welding method is characterized in that friction stir lap welding is completed by heating the two sides of the upper surface of a welding seam through a resistance type auxiliary heating strip, and an auxiliary heat source can provide the effects of preheating before welding and slow cooling after welding for a welded plate. According to the stirring head for welding the metal and the thermoplastic polymer and the welding method, the flow choking appearance design of the stirring head can inhibit the overflow of a thermoplastic polymer material and improve the surface quality of the welding seam; and the welding auxiliary heating process for the metal and the thermoplastic polymer material is based on the thoughts of isothermal peak rotation speed reduction and stress reduction anti-pulling-off, the rotation speed of the stirring head is reduced under the condition that the same welding temperature is guaranteed, and therefore joint surface forming is improved, internal defects are eliminated, the interface structure is optimized, and the quality of a heterogeneous joint is comprehensively improved.

The invention provides a production method of a high-temperature superconductive REBCO film. The method comprises the following steps: 1, preparing a fluorine-free precursor solution according to an atom ratio of RE:Ba:Cu of 1:1.75:3; 2, preparing a fluorine-containing precursor solution according to an atom ratio of RE:Ba:Cu of 1:(1.5-2):3; 3, uniformly coating a LaAlO3 substrate with the fluorine-free precursor solution through adopting a spin coating technology, and carrying out heat treatment to obtain a fluorine-free monolayer precursor film; 4, uniformly coating the fluorine-free monolayer precursor film with the fluorine-containing precursor solution through adopting the spin coating technology, and carrying out heat treatment to obtain a fluorine-free/fluorine-containing bilayer precursor film; and 5, carrying out heat treatment on the fluorine-free/fluorine-containing bilayer precursor film to obtain the REBCO superconductive film. The production method is simple, allows the produced high-temperature superconductive REBCO film to have sharp cubic orientation and excellent superconductive performance, and improves the current carrying performance of the high-temperature superconductive REBCO film at 77 K.

The invention discloses a high-plasticity aluminum alloy processing technology. The two elements of silicon and aluminum are used as an alloy main body, and a certain amount of Cu, Zn and Sr are addedand hot working treatment is carried out so as to prepare the aluminum alloy with high plasticity. According to the high-plasticity aluminum alloy processing technology, the two elements of silicon and aluminum are used as the alloy main body, and the certain amount of Cu, Zn and Sr are added and the hot working treatment is carried out, thus a compact metal-rich intermetallic compound with uniform and dense crystal grains and uniform component and dispersed distributed on a matrix and a defect-free tissue are obtained, the plasticity of the alloy can be remarkably improved on the basis thatthe strength of the alloy is not reduced.

The invention relates to a modified glass material for repairing a carbon/carbon composite material SiC coating based on a laser cladding method as well as a preparation method and a use method of themodified glass material. Borosilicate glass is modified by rare earth element samarium, so that the absorptivity of the material to a laser band covered by an optical fiber laser is remarkably improved; on one hand, the cladding quality of the modified borosilicate glass can be improved, and the oxidation resistance of a repaired carbon/carbon composite material SiC coating sample is improved; and on the other hand, the energy loss of laser can be effectively reduced, and the development goals of greenness, environmental protection and cost saving are achieved.

The invention relates to a silicon carbide wafer, a silicon carbide ingot and a preparation method thereof, and belongs to the field of semiconductor materials. The silicon carbide single crystal wafer contains nitrogen, the number of hexagonal color spots of the silicon carbide single crystal wafer is not more than 50, the edge parts forming the hexagonal color spots are perpendicular to the <10-10> direction, and the number of holes contained in the edge parts of each hexagonal color spot is not more than 10. According to the invention, novel defects, i.e. hexagonal color spots and cavity defects on the hexagonal color spots, existing in the nitrogen-containing silicon carbide wafer are discovered, the hexagonal color spots enable the resistivity of the silicon carbide wafer to be non-uniform and seriously influence the electrical properties of a semiconductor device prepared from the silicon carbide wafer, for example, the device made on the silicon carbide wafer is invalid, and theexistence of the cavities not only influences the performance of the silicon carbide wafer, such as breakdown field intensity, but also may extend to a device manufactured by taking the silicon carbide single crystal wafer as a substrate. The present application provides a silicon carbide wafer and a silicon carbide ingot including hexagonal spots and a small number of cavities.

The invention discloses a black polyimide film with high electrical strength and high shielding property, and a preparation process thereof, and relates to the technical field of polyimide films. Theblack polyimide film comprises polyamide acid resin, a black pigment, a shielding agent and a dispersing agent, wherein the black pigment is formed by compounding carbon black and fluorinated graphene. The preparation method comprises the following steps: mixing, grinding and dispersing the black pigment, the shielding agent, the solvent and the dispersing agent to obtain a black slurry, adding the black slurry into the polyamide acid resin, stirring to obtain black polyamide acid resin, casting the black polyamide acid resin to form a film, and carrying out thermal imidization, longitudinal stretching and transverse stretching to obtain the black polyimide film. The prepared black polyimide film has low light transmittance and pinhole rate, excellent electrical strength and ideal comprehensive performance, the light transmittance is smaller than 0.2%, and the electrical strength is larger than or equal to 150%.

The invention discloses a preparation process of a mesophase pitch based a protofilament continuous filament. The preparation process comprises the following steps of sending mesophase pitch into a screw extruder through a feeder; heating, by a screw of the extruder, the mesophase pitch, and carrying out reduced pressure deaeration when the screw runs; conveying, by the screw extruder, a melted and deaerated melt into a spinning component through a metering pump, spreading the melt into a spinneret through a spure spreader of the spinning component, and extruding through spinneret orifices ofthe spinneret to carry out spinning; oiling an extrusion-molded fiber bundle, drawing by a drawing roll, and then collecting the filament. A reduced pressure deaeration opening in the preparation process is located behind a final zone; on one hand, the melt in a melting zone can be prevented from being evacuated and broken down to cause that a suction gas is dissolved in the melt. The mesophase pitch is completely molten after passing through a screw melting zone, and is uniformly mixed under the shearing action of a twin screw to be capable of forming a layer of thin and uniform melt in a tank; at the moment, gas bubbles in the interior of the melt can be completely separated through the reduced pressure deaeration. The preparation process is good in production efficiency, and moreover, the prepared mesophase pitch based protofilament is good in performance.

The invention discloses a method for improving gap filling capability of a pre-metal dielectric. The method comprises the following steps: taking a shallow groove isolation area in a semiconductor substrate as a boundary, and forming a CMOS structure adopting a PMOS structure and an NMOS structure, wherein both the PMOS structure and the NMOS structure at least comprise gate oxides and polycrystalline silicon grid electrodes formed on the surface of the semiconductor substrate in sequence, side wall layers positioned on the two sides of the polycrystalline silicon grid electrodes and active areas positioned on the two sides of the polycrystalline silicon grid electrodes and in the semiconductor substrate; depositing a stress silicon nitride layer on the surface of the CMOS structure; depositing a silicon oxide layer on the surface of the stress silicon nitride layer, performing anisotropic etching, and reserving a silicon oxide layer on the side walls of the stress silicon nitride layer; performing fluorine treatment on the surfaces of the silicon oxide layer and the stress silicon nitride layer, and improving the growth selection ratio of the pre-metal dielectric on the surface of the stress silicon nitride layer and the surface of the silicon oxide layer; depositing the pre-metal dielectric. Through the adoption of the method, the defect that void is formed between the grid electrodes can be effectively overcome.

The invention discloses a preparation method of resinified graphene anticorrosive paint based on high-temperature mechanochemistry. The preparation method comprises the following steps: taking graphene or graphene oxide, and adding phenylenediamine into a graphene or graphene oxide aqueous solution for modification pretreatment; adding an organic resin and a solvent, adopting high-temperature mechanochemical method for treatment, and subjecting an obtained solution to centrifugation, suction filtration and drying to obtain a resinified graphene; mixing the resinified graphene with an organic resin, a diluent and an additive, and mechanically stirring to obtain a component A; and uniformly mixing the component A with a component B curing agent to obtain the resinified graphene anticorrosivepaint. According to the invention, the chemical reaction of graphene and the organic resin can be realized through a high-temperature mechanochemical technology; the resinified graphene can be uniformly dispersed in the organic resin, the bonding strength with a film-forming substance is higher, hole defects in a coating are reduced, and the barrier property and mechanical properties of the coating are improved, so that better corrosion resistance is achieved.

A method for forming a semiconductor structure comprises the steps of providing a substrate, where a metal structure is arranged in the substrate, and the metal structure is exposed out of the surface of the substrate; forming a dielectric structure on the surface of the metal structure; forming an opening penetrating through the dielectric structure in the dielectric structure; after the opening is formed, performing densification treatment on the side wall surface of the opening and the surface of the dielectric structure; and after the densification treatment, forming an interconnection structure in the opening by adopting a selective metal growth process. Therefore, the performance and the reliability of the semiconductor device are improved.

The invention relates to a coating device for a mixed solution of a precursor and a surfactant. The device comprises a coating die head, a die head lifting table, a post-processing device, a coating platform and a conveying device, a to-be-coated substrate is coated by the coating die head and then is conveyed to the post-processing device by the conveying device for post-processing, and under thedriving of the conveying device, the relative movement is generated between the die head lifting table and the coating platform. The coating die head is communicated with an injection pump with a mixing cavity through a guide pipe, the injection pump is communicated with at least two raw material bottles, one raw material bottle is filled with a divalent precursor solution, and the other raw material bottle is filled with a surfactant solution. The injection pump respectively and simultaneously sucks the divalent precursor solution and the surfactant solution and injects the divalent precursor solution and the surfactant solution into the mixing cavity for mixing, and the mixed solution is conveyed to the coating die head for use. The invention further discloses a using method and application of the coating device. According to the present invention, the coverage rate of the coating film and the flatness of the surface of the coating film are improved, and the perovskite thin film with more uniform film thickness distribution is obtained.