A silica container for pulling up monocrystalline silicon and method for manufacturing same

A silicon dioxide and manufacturing method technology, applied in chemical instruments and methods, self-melting liquid pulling method, single crystal growth, etc., can solve the problems of polluted ultra-high-purity silicon melt, etc., to reduce void defects, low Cost, effect of preventing air bubbles

Inactive Publication Date: 2014-03-19
SHIN ETABU QUARTZ PRODS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since natural quartz glass contains a variety of impurity metal elements in a high-concentration state, there is a problem of contamination of ultra-high-purity silicon melt

Method used

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  • A silica container for pulling up monocrystalline silicon and method for manufacturing same
  • A silica container for pulling up monocrystalline silicon and method for manufacturing same
  • A silica container for pulling up monocrystalline silicon and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1）

[0105] according to figure 2 In the steps (1) to (4) shown, a silica container for pulling a silicon single crystal is produced. As the first raw material powder 11 , natural quartz powder having a particle diameter of 50 to 500 μm and a purity of 99.999% by mass was prepared. while doing image 3 and Figure 5 The graphite frame 101 shown is rotated while the first powdered raw material 11 is put in to form a temporary molded body 41 of the powdered first raw material. Then, use Figure 6 and Figure 7 In the shown device, the internal environment of the temporary molded body 41 of the first raw material powder is set as dry N 2 95 volume (vol)%, H 2 5% by volume of the mixed gas is discharged and heated and melted inside the temporary molded body 41 while suctioning and reducing pressure from the outer peripheral portion. Thereby, the silica container 71 which made the outer side a white opaque silica sintered body and the inner side a colorless transparent silica gl...

Embodiment 2）

[0107] Using the same second raw material powder 12 (second raw material powder a, synthetic silica glass frit) as in Example 1, a silica container was manufactured basically in the same manner as in Example 1, except that the following points were changed. The first raw material powder 11 was mixed with an aluminum nitrate solution and dried in the same manner as in Example 1 to contain 10 mass ppm of Al. The environment during discharge heating is set to dry N 2 99% by volume, H 2 1% by volume of the mixed gas, the thickness of the high OH group concentration silica glass layer 59 at the center portion of the container bottom was set to 80 μm.

Embodiment 3）

[0109] Using the same first raw material powder 11 as in Example 1, a silica container was manufactured basically in the same manner as in Example 1, except for the following points. The second raw material powder 12 is a high-purity synthetic silica glass powder (second raw material powder b) containing 550 mass ppm of OH groups. A high OH group concentration silica glass layer 59 was formed from the entire inner surface of the bottom of the container to a part of the curved portion, especially at the center of the bottom of the container with a thickness of 460 μm.

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Abstract

A silica container for pulling up monocrystalline silicon, the silica container having a straight trunk, a curved portion, and a base portion, wherein the silica container for pulling up monocrystalline silicon is characterized in that the outer side of the silica container comprises opaque silica glass containing gas bubbles, and the inner side of the silica container is composed of transparent silica glass substantially devoid of gas bubbles, a silica-glass layer measuring 20 to 1,000 mum in thickness and containing OH groups in a concentration of greater than 300 mass ppm and equal to or less than 3,000 mass ppm or less being formed on the inner surface of the bottom portion. Provided thereby is an inexpensive silica container for pulling up monocrystalline silicon enabling cavity defects, i.e., voids and pinholes, to be minimized in pulled-up monocrystalline silicon.

Description

technical field [0001] The invention relates to a silicon dioxide container for pulling single crystal silicon and a manufacturing method thereof. Background technique [0002] Conventionally, production methods such as those described in Patent Document 1 and Patent Document 2 have been used as methods for producing silica crucibles for producing silicon single crystals for LSI (Large Scale Integration). These methods are to put ultra-high-purity treated quartz powder or synthetic cristobalite powder into the rotating mold frame to make it shape, then install carbon electrodes from the top, and cause arc discharge by energizing the electrodes to reduce the ambient temperature. It rises to the melting temperature range of quartz powder and the like (estimated to be around 1800 to 2100°C), thereby melting and sintering the quartz powder. However, these production methods have the problem of high cost due to the use of ultra-high-purity quartz raw material powder. In addition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C03B20/00C30B15/10
CPCC03B2201/03C03B19/095C30B15/10C30B29/06C30B35/002Y10T117/1032Y02P40/57C03B20/00
Inventor 山形茂
Owner SHIN ETABU QUARTZ PRODS
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