Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and method for forming same

A technology of semiconductors and fins, applied in the field of fin field effect transistors, can solve problems such as unsatisfactory specifications

Active Publication Date: 2018-06-26
TAIWAN SEMICON MFG CO LTD
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Known FinFET devices with high-k metal gates and their fabrication methods are no longer sufficient for all aspects, especially when NMOS and PMOS devices are fabricated together

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method for forming same
  • Semiconductor device and method for forming same
  • Semiconductor device and method for forming same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The following summary presents a number of different embodiments, or instances, for implementing various features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the disclosure. These are, of course, illustrative only and are not intended to be limiting. For example: in the following description, the formation of the first feature on or over the second feature may include an embodiment where the first feature and the second feature are in direct contact, or may include an embodiment where the first feature and the second feature are in direct contact. Embodiments of additional features are formed such that the first and second features are not in direct contact.

[0013] The terms used herein are only used to describe specific embodiments, and are not intended to limit the scope of patent applications. For example: the terms "a" or "the" in the singular may also be used in the plural unless limited othe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Provided are a semiconductor device and a method for forming the semiconductor device. The semiconductor device includes an n-type gate structure disposed on a first semiconductor fin, wherein the n-type gate structure is combined with fluorine and includes an n-type work function metal layer disposed on a first high dielectric constant dielectric layer. The n-type work function metal layer comprises titanium aluminum (TiAl) alloy in which atomic ratio of titanium to aluminum is substantially between 1 and 3. The semiconductor device further includes a p-type gate structure disposed on a second semiconductor fin, wherein the p-type gate structure is combined with fluorine and includes a p-type work function metal layer disposed on a second high dielectric constant dielectric layer. The p-type work function metal layer comprises titanium nitride (TiN), wherein the atomic ratio of titanium to nitrogen is substantially between 1:0.9 and 1:1.1.

Description

technical field [0001] The present disclosure is related to semiconductor devices, especially related to the gate structure of Fin-like Field Effect Transistor (FinFET) and its manufacturing method. Background technique [0002] The semiconductor integrated circuit (Integrated Circuit; IC) industry has experienced rapid growth. In the course of IC evolution, functional density (defined as the number of interconnected elements per wafer area) generally decreases with geometric size (that is, the smallest component or circuit that can be made using a process) And increase. A shrinking process generally offers the advantages of increased yield and reduced associated costs. However, such scaling increases the complexity of the process and production of the IC. To achieve these advances, similar developments in IC production are necessary. [0003] As the semiconductor IC industry enters the nanotechnology process generation in pursuit of higher device density, higher perform...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L29/78H01L21/28H01L21/336
CPCH01L29/401H01L29/42356H01L29/66795H01L29/785
Inventor 张简旭珂余人皓郑志成
Owner TAIWAN SEMICON MFG CO LTD