Device for processing silicon ring and processing method

Abstract

The invention discloses a device for processing a silicon ring and a processing method. The device comprises a chamfering disc and a driving device, wherein the chamfering disc rotates under the driving of the driving device. The method for processing a silicon ring by adopting the device comprises the steps of (1) installing the chamfering disc on a rotating device, and coating the chamfering disc with grinding mortar; (2) chamfering an inner circle of the silicon ring, and adjusting the edge shape of the inner circle through adjusting the autorotation speed and grinding time of the chamfering disc; and (3) cleaning the silicon ring. Chamfering is performing on the inner circle of the silicon ring according to the device and processing method disclosed by the invention, thereby being simple to implement and high in efficiency, and greatly reducing the processing time of the inner circle.

Description

Technical field [0001] The invention relates to a device and a processing method for processing silicon rings. Background technique [0002] Generally, when manufacturing semiconductor integrated circuits, the interlayer insulating layer (SiO 2 ) Perform an etching process. In order to etch the silicon wafer with the insulating layer, a plasma etching device is used. In this plasma etching apparatus, the etching gas is directed to the silicon wafer through the through-holes provided in the silicon electrode plate while applying a high-frequency voltage to generate plasma between the silicon electrode plate for plasma etching and the silicon wafer. , The plasma acts on the silicon wafer to etch the insulating layer on the surface of the silicon wafer. In this process, the silicon wafer is placed on the stage. Due to the difference in technology or silicon wafer size, the structure of the slide table is also different, collectively referred to as the silicon ring. [0003] During...

AI Technical Summary

Problems solved by technology

[0003] When the silicon wafer is etched by plasma, the silicon part carrying the silicon wafer will also be etched by the plasma. If there are damages and burrs on the edge of the silicon part, silicon slag will fall off due to bumping, and the silicon wafer to be etched Causes contamination and affects the yield of the final product, so the edges of silicon components are generally required to be chamfered

The overall structure of silicon parts is generally completed by a machining center. When the edge is chamfered by the CNC center, the efficiency is very low, which affects the output of the machining center.

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