A Method for Analyzing Accelerated Interface State Defect Formation During Device Ionizing Radiation Damage

Abstract

The invention discloses a method for accelerating formation of interface state defects in process of analyzing an ionizing radiation damage mechanism of an electronic element appliance, and relates toa method for accelerating formation of interface state defects. The method aims to solve the problem that the radiation induced oxide capturing positive charge and of interface state defects generateinfluences on the analysis of the damage mechanism at the same time during the analysis process of the ionizing radiation damage mechanism of the electronic element appliance using SiO2 as the insulation material and a passivation layer. The method includes steps of calculating ionization / displacement absorbing dosage and injection depth of unit injection incident particles; according to the proportional relationship of the ionization and displacement absorbing dosages, setting the dosage rate of the incident particles, radiating according to the order of high first and low later. The methodaccelerates the formation of interface state defects, separates the formation processes of the oxide capturing positive charge and the interface state defects, and separately studies the influence ofthe oxide capturing positive charge or the interface state defects. The method is applicable to analyze the ionizing radiation damage mechanism of the electronic element appliance.

Description

technical field [0001] The invention relates to a method for accelerating the formation of interface state defects. Background technique [0002] With the development of science and technology, my country's aerospace industry has made great progress and has become one of the aerospace powers. All kinds of spacecraft are closely related to our life and safety. Electronic components used in spacecraft will inevitably be affected by the space environment during their in-orbit service. These factors include solar cosmic ray particles, galactic cosmic ray particles, and radiation environments such as the Earth's radiation belts. Electronic components play a vital role in the electronic control system and information system of a spacecraft. Various radiation environments in space can lead to performance degradation, abnormal function or even failure of electronic components. [0003] The radiation environment will cause oxide positive charges and interface state trap defects ins...

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Problems solved by technology

[0006] The present invention solves SiO 2 In the process of analyzing the ionizing radiation damage mechanism of electronic components as insulating materials and passivation layers, radiation-induced oxides capture positive charges and interface state defects simultaneously produce problems that affect the analysis of damage mechanisms. A method for analyzing ionizing radiation of electronic components is proposed Methods to Accelerate the Formation of Interface State Defects During Damage Mechanisms

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