N00N state preparation device

A technology for preparing devices and beams, applied in laser parts, electrical components, lasers, etc., can solve the problems of complex device structure and poor scalability, and achieve the effect of improving sensitivity

Inactive Publication Date: 2018-07-13
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that the current device for preparing the N00N state has a complex structure, and can o

Method used

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Experimental program
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Effect test

specific Embodiment approach 1

[0028] Specific implementation mode one: see figure 1 Describe this embodiment mode, a kind of N00N state preparation device described in this embodiment mode, it comprises laser device 1, polarizer 2, first 50:50 dichroic prism 3, frequency doubling crystal 4, long-wave filter plate 5, down conversion crystal 6. Shortwave filter 7, first reflector 8, second reflector 9, attenuator 10, phase shifter 11 and second 50:50 dichroic prism 12;

[0029] The pulsed laser light generated by the laser 1 is polarized by the polarizer 2 and becomes linearly polarized light, and then enters the first 50:50 beam splitting prism 3 and is divided into two beams;

[0030] Wherein, after a beam of linearly polarized light transmitted by the first 50:50 dichroic prism 3 is transmitted through the frequency doubling crystal 4, the long-wave filter 5, the down-conversion crystal 6, and the short-wave filter 7 in sequence, a compressed vacuum beam is obtained. The vacuum light beam is incident on ...

specific Embodiment approach 2

[0042] Specific implementation mode two: see figure 1 Describe this embodiment. The difference between this embodiment and the N00N state preparation device described in Embodiment 1 is that the wavelength of the compressed vacuum beam output by the short-wave filter 7 is consistent with the wavelength of the beam output by the laser 1 .

specific Embodiment approach 3

[0043] Specific implementation mode three: see figure 1 Describe this embodiment, the difference between this embodiment and the N00N state preparation device described in Embodiment 1 is that the wave function |ξ> of the compressed vacuum beam output by the short-wave filter 7 is:

[0044]

[0045] The wave function |α> of the coherent state beam with adjustable phase and light intensity is:

[0046]

[0047] Among them, cosh represents the hyperbolic cosine function, tanh represents the hyperbolic tangent function, r represents the compression coefficient, |2m> represents the Fock state wave function containing 2m photons, m is an integer, α=|α|exp(iθ), θ is the beam phase, |n> represents the Fock state wave function containing n photons, i represents the imaginary number unit, and α represents the coherent state mode length.

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Abstract

The invention discloses an N00N state preparation device and belongs to the field of N00N state preparation with an aim to solve problems that an existing N00N state preparation device is complicatedin structure and poor in expansibility since only N00N states with a specific number of photons can be prepared. The N00N state preparation device comprises a laser, a polarizer, a first 50:50 beam splitter prism, a frequency doubling crystal, a long wave filter, a down-conversion crystal, a short wave filter, a first reflector, a second reflector, an attenuation slice, a phase shifter and a second 50:50 beam splitter prism; phase and light-adjustable coherent beam emitted by the phase shifter are reflected via the first reflector, output compressed vacuum beam interferes at the second 50:50 beam splitter prism, and N00N state laser beam is obtained. The N00N state preparation device is applied to the field of quantum information.

Description

technical field [0001] The invention belongs to the field of N00N state preparation. Background technique [0002] The N00N state is a two-mode photon state, and the n photons in this state are either in mode 1 or fully in mode 2. There are many applications of this photonic state, the most typical being the estimated sensitivity to achieve the Heisenberg limit in phase estimation. The larger the n of the N00N state is, the more photons it contains, and the higher the phase estimation sensitivity can be achieved. At present, most of the devices for preparing N00N states are complex in structure and poor in scalability. A set of devices can only prepare N00N states containing a specific number of photons, which has many limitations in practical applications. Contents of the invention [0003] The purpose of the present invention is to solve the problem that the current device for preparing N00N state has a complicated structure, and can only prepare N00N state with a spec...

Claims

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Application Information

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IPC IPC(8): H01S3/00H01S3/10
Inventor 张子静赵远岑龙柱
Owner HARBIN INST OF TECH
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