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A pixel-level packaging structure and processing method of an uncooled infrared detector

A processing method and packaging structure technology, applied in the field of MEMS, can solve problems such as failure to work normally, vacuum failure, etc., and achieve the effects of improving vacuum degree, prolonging service life, and increasing internal surface area

Active Publication Date: 2020-05-26
WUHAN GUIDE INFRARED CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This solves the technical problem that the uncooled infrared detector is prone to vacuum failure and the overall failure to work normally

Method used

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  • A pixel-level packaging structure and processing method of an uncooled infrared detector
  • A pixel-level packaging structure and processing method of an uncooled infrared detector
  • A pixel-level packaging structure and processing method of an uncooled infrared detector

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Such as image 3 As shown, a pixel-level packaging structure A includes a readout circuit 1 and a vacuum chamber array located on the upper surface of the readout circuit 1. The vacuum chamber array includes a plurality of vacuum chambers separated by insulating trenches 6, each A pixel unit device 2 is accommodated in the vacuum chamber, constituting a pixel level packaging unit, and a getter side wall 4-1 made of a getter is arranged on the inner side wall of the vacuum chamber. The method for obtaining the pixel-level packaging structure A:

[0037] S1: A plurality of neatly arranged pixel unit devices 2 are obtained on the upper surface of the readout circuit 1, covered with a sacrificial layer 3, and the sacrificial layer 3 is etched downward to obtain grid-shaped trenches for dividing pixels, the Etching deep into the bottom of the sacrificial layer 3;

[0038] S2: Fill the groove with a getter, etch the getter along the middle of the groove to obtain the getter...

Embodiment 2

[0042] Such as Figure 4 As shown, a pixel-level packaging structure B includes a readout circuit 1 and a vacuum chamber array located on the upper surface of the readout circuit 1. The vacuum chamber array includes a plurality of vacuum chambers separated by insulating trenches 6, each A pixel unit device 2 is accommodated in the vacuum chamber to form a pixel-level packaging unit. The inner side wall of the vacuum chamber is provided with a getter side wall 4-1 composed of a getter, and the top of the vacuum chamber is located at the pixel level. The area outside the vertical projection area is provided with an air suction upper wall 4-2, and the bottom of the vacuum chamber is provided with an air suction lower wall 4-3 made of a getter. The method for obtaining the pixel-level packaging structure B:

[0043]S1: grow the getter lower wall 4-3 on the upper surface of the readout circuit 1, obtain a plurality of neatly arranged pixel unit devices 2 on the upper surface of th...

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Abstract

The invention discloses a pixel-level packaging structure of an uncooled infrared detector. The pixel-level packaging structure comprises a readout circuit and a vacuum chamber array on the upper surface of the readout circuit, wherein the vacuum chamber array comprises multiple vacuum chambers divided by insulting grooves, each vacuum chamber stores a pixel unit device so as to form a pixel-levelpackaging unit, and inner side walls of the vacuum chamber are wrapped by a getter so as to form air absorbing side walls. Each pixel is packaged separately, so that the pixels do not affect each other; the area for the getter is increased greatly by using the side walls, so that the vacuum degree in the cavity is maintained, and the service life of the device is prolonged.

Description

technical field [0001] The invention belongs to the technical field of MEMS (Micro-Electro-Mechanical System, micro-electro-mechanical system), and more specifically relates to a pixel-level packaging structure of an uncooled infrared detector. Background technique [0002] Vacuum packaging is one of the problems of MEMS technology. The quality of vacuum sealing has an important impact on the performance of MEMS devices, and even determines whether the devices can work normally. Due to the existence and release of residual gas from bonding materials and cavity materials, the vacuum in the cavity decreases as the working time of the device goes on, which shortens the service life of the device. [0003] For uncooled infrared detectors, the traditional packaging types are mainly chip-level packaging or wafer-level packaging, that is, the entire detector array is packaged in a vacuum chamber using semiconductor manufacturing technology. The process is relatively simple and can ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/00B81C1/00G01J5/20
CPCB81B7/0038B81C1/00285G01J5/20
Inventor 蔡光艳马占锋高健飞黄立
Owner WUHAN GUIDE INFRARED CO LTD