A half-bridge power module and its manufacturing method
A half-bridge power module and power terminal technology, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc. The effect of miniaturization
Active Publication Date: 2021-03-02
BYD SEMICON CO LTD
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Problems solved by technology
[0004] The purpose of the present invention is to provide a half-bridge power module and its manufacturing method, which aims to solve the problem that the traditional power semiconductor module needs to be molded, and contains an electrical adapter block that plays a supporting role, and the module is relatively large
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[0022] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0023] see figure 1 , a pair of power semiconductor chips are connected to form a half-bridge drive circuit, each power semiconductor chip forms a bridge arm, the upper bridge arm includes an upper bridge IGBT chip 101 and an upper bridge FRD (fast recovery diode, fast recovery diode) chip 103, and the lower bridge arm The arm includes a lower side IGBT chip 102 and a lower side FRD chip 104 .
[0024] see Figure 1-4 , the half-bridge power module in the preferred embodiment of the present invention includes an insulating dielectric substrate 10 , at least one p...
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The invention provides a half-bridge power module and a manufacturing method thereof. The half-bridge power module comprises: an insulating medium substrate, the upper surface of which has a first conductive layer; and at least one pair of power semiconductor chips, the chips are attached to the insulating medium substrate on the upper surface of the chip; an insulating layer covering the insulating dielectric substrate and wrapping the chip inside, the insulating layer is provided with a through hole located above the chip, and the through hole is filled with a conductive substance; the second The conductive layer is disposed on the insulating layer, and the second conductive layer connects each pair of the power semiconductor chip circuits through the conductive substance and the first conductive layer to form a half-bridge driving circuit. The package does not need to open the plastic mold, which saves the production cost; in addition, the power semiconductor chip is electrically connected to the upper conductive layer by opening the through hole in the insulating layer and filling the conductive material, which reduces the volume of the module and is conducive to the miniaturization of the module.
Description
technical field [0001] The invention relates to the field of hybrid integrated circuits, in particular to a half-bridge power module and a manufacturing method thereof. Background technique [0002] A power semiconductor module is a device in which multiple semiconductor chips are packaged together according to a certain circuit structure. In an IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) module, the IGBT chip and the diode chip are integrated into a common base plate, and the power device of the module is insulated from its mounting surface (ie, heat sink). [0003] Traditional power semiconductor modules require mold opening for plastic molding, which is costly. In addition, power semiconductor modules include electrical transfer blocks that play a supporting role, and the modules are large in size and low in integration. Contents of the invention [0004] The purpose of the present invention is to provide a half-bridge power module and i...
Claims
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IPC IPC(8): H01L25/07H01L23/48H01L23/485H01L21/60
CPCH01L23/481H01L23/485H01L24/82H01L25/072H01L2224/82H01L2224/18
Inventor 李慧杨胜松廖雯祺杨钦耀李艳张建利曾秋莲
Owner BYD SEMICON CO LTD