Blue-green light emitting diode and epitaxial method therefor

A light-emitting diode, blue-green technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low crystal quality, poor crystal quality in the active area, In precipitation, etc., to improve crystal quality, increase quantum efficiency, The effect of high growth temperature

Active Publication Date: 2018-07-31
XIAMEN CHANGELIGHT CO LTD
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the prior art, due to the long wavelength of the green light-emitting diode, the In composition of the active region material is relatively high, so the stress accumulated in the active region is relatively large, and the crystal quality is relatively low.
Moreover, due to the high In concentration

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Blue-green light emitting diode and epitaxial method therefor
  • Blue-green light emitting diode and epitaxial method therefor
  • Blue-green light emitting diode and epitaxial method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0030] see Figure 1 to Figure 3 As mentioned above, in the blue-green light-emitting diode disclosed by the present invention, a buffer layer 2 is grown on a substrate 1, an unintentionally doped layer 3 is grown on the buffer layer 2, and the material of the unintentionally doped layer 3 is GaN. A first-type conductive layer 4 is grown on the doped layer 3, the material of the first-type conductive layer 4 is GaN, an active region 5 is grown on the first-type conductive layer 4, an electron blocking layer 6 is grown on the active region 5, and electrons The blocking layer 6 is made of AlGaN, and the second-type conductive layer 7 is grown on the electron blocking layer 6. The second-type conductive layer 7 is made of GaN, and the ohmic contact layer 8 is grown on the second-type conductive layer 7. On the ohmic contact layer 8 A current sp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Growth temperatureaaaaaaaaaa
Login to view more

Abstract

The invention discloses a blue-green light emitting diode. The light emitting diode includes an active region, the active region consists of multiple cycles of a low temperature front well layer, a quantum well, a cap layer and a quantum barrier which are successively generated from bottom to top, and each cap layer consists of a first cap layer, a second cap layer and a third cap layer, the firstcap layer, the second cap layer and the third cap layer having growth temperatures in gradient increase. An epitaxial method of the blue-green light emitting diode is also disclosed. According to thetechnical scheme, crystal qualities of the active region can be enhanced, and therefore, internal quantum efficiency can be improved effectively.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a blue-green light-emitting diode and an epitaxy method thereof. Background technique [0002] In the prior art, due to the long wavelength of the green light-emitting diode, the In composition of the material in the active region is relatively high, so the stress accumulated in the active region is relatively large, and the crystal quality is relatively low. Moreover, due to the high In concentration when growing quantum wells, it is easy to cause In precipitation, which not only deteriorates the crystal quality of the active region, but also affects the quality of the subsequent P-type crystals, resulting in colorful spots on the surface, which makes the luminous efficiency of the entire device decline. [0003] In view of this, the present invention develops a blue-green light-emitting diode and its epitaxial method that overcomes the above defects, and this cas...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/32H01L33/06H01L33/00
Inventor 林志伟陈凯轩卓祥景姜伟汪洋童吉楚陈亮李俊贤吴奇隆刘英策
Owner XIAMEN CHANGELIGHT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap